Abstract: Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.

Abstract: An apparatus and method for forming a contact to silicide through an active diffusion region, a contact to a contact through an active diffusion region, and a contact to a polysilicon structure through a shallow trench isolation region to create a conductive connection with a circuit node of interest. In one embodiment, an opening through the active diffusion region to an associated silicide layer is used to form the conductive connection. In another embodiment, an opening through the active diffusion region to an associated contact is used to form the conductive connection. In yet another embodiment, an opening through a shallow trench isolation region to a polysilicon structure is used to form the conductive connection.

Abstract: Localized trenches or access holes are milled in a semiconductor substrate to define access points to structures of an integrated circuit intended for circuit editing. A conductor is deposited, such as with a focused ion beam tool, in the access holes and a localized heat is applied to the conductor for silicide formation, especially at the boundary between a semiconductor structure, such as diffusion regions, and the deposited conductor. Localized heat may be generated at the target location through precise laser application, current generation through the target location, or a combination thereof.