Abstract: Thick film bond surfaces on a support structure, such as a ceramic substrate or an IC package substrate, tend to deform during processing. A personality kit having raised bosses engages with and compresses the bond surfaces, resulting in a flatter, wider bond surface having improved reflectivity. The personality kit is fit within a clamp that can be used as a stand-alone unit or integrated into an existing machine, such as a wire bonder.

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Abstract: A method for bonding includes positioning a bonding strip adjacent a sole first bond head, the bonding strip having a plurality of strip units, and bonding, with only the first bond head, a first number of the plurality of strip units. The method further includes transporting the bonding strip from the first bond head and positioning the bonding strip adjacent a sole second bond head, and bonding, with only the second bond head, a remaining number of the plurality of strip units on the bonding strip. In one embodiment, the method also includes heating at least one of the plurality of strip units prior to bonding the bonding strip. In one embodiment, the method also includes clamping, with a sole clamp, the bonding strip, thereby limiting warpage of the bonding strip.