Patents by Inventor Peter Sandvik
Peter Sandvik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10549236Abstract: Systems and methods use oxygen uncoupling metal oxide material for decomposition of NOx. A gaseous input stream comprising NOx is contacted with a metal oxide particle, generating nitrogen (N2) gas and an oxidized metal oxide particle. After contacting the first gaseous input stream with the metal oxide particle, a first gaseous product stream is collected. The first gaseous product stream includes substantially no NOx. A second gaseous input stream comprising at least one sweeping gas is also contacted with the oxidized metal oxide particle. After contacting the oxidized metal oxide particle, the sweeping gas includes oxygen (O2) and a reduced metal oxide particle is generated. Then a second gaseous product stream is collected, where the second gaseous product stream includes oxygen (O2) gas.Type: GrantFiled: January 29, 2019Date of Patent: February 4, 2020Assignee: OHIO STATE INNOVATION FOUNDATIONInventors: Liang-Shih Fan, Deven Swapneshu Baser, Peter Sandvik, Mandar Kathe, Charles Fryer
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Publication number: 20190232220Abstract: Systems and methods use oxygen uncoupling metal oxide material for decomposition of NOx. A gaseous input stream comprising NOx is contacted with a metal oxide particle, generating nitrogen (N2) gas and an oxidized metal oxide particle. After contacting the first gaseous input stream with the metal oxide particle, a first gaseous product stream is collected. The first gaseous product stream includes substantially no NOx. A second gaseous input stream comprising at least one sweeping gas is also contacted with the oxidized metal oxide particle. After contacting the oxidized metal oxide particle, the sweeping gas includes oxygen (O2) and a reduced metal oxide particle is generated. Then a second gaseous product stream is collected, where the second gaseous product stream includes oxygen (O2) gas.Type: ApplicationFiled: January 29, 2019Publication date: August 1, 2019Inventors: Liang-Shih Fan, Deven Swapneshu Baser, Peter Sandvik, Mandar Kathe, Charles Fryer
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Patent number: 8377756Abstract: In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.Type: GrantFiled: July 26, 2011Date of Patent: February 19, 2013Assignee: General Electric CompanyInventors: Stephen Daley Arthur, Kevin Matocha, Peter Sandvik, Zachary Stum, Peter Losee, James McMahon
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Publication number: 20130026559Abstract: In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs (262) comprise a body (252) (P type). These features are formed on an N-type epitaxial layer (220), which is formed on an N-type substrate (216). A contact (290) extends across and contacts a plurality of source rungs (262) and bodies (252). Gate oxide and a gate contact overlie a leg of a first well and a leg of a second adjacent well, inverting the conductivity responsive to a gate voltage. A MOSFET comprises a plurality of these cells to attain a desired low channel resistance. The cell regions are formed using self-alignment techniques at several states of the fabrication process.Type: ApplicationFiled: July 26, 2011Publication date: January 31, 2013Inventors: Stephen Daley Arthur, Kevin Matocha, Peter Sandvik, Zachary Stum, Peter Losee, James McMahon
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Publication number: 20080006844Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: ApplicationFiled: January 9, 2007Publication date: January 10, 2008Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20080008855Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: ApplicationFiled: January 9, 2007Publication date: January 10, 2008Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070166832Abstract: According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.Type: ApplicationFiled: March 19, 2007Publication date: July 19, 2007Applicant: General Electric CompanyInventors: Vinayak Tilak, Kevin Matocha, Peter Sandvik
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Publication number: 20070158785Abstract: A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: ApplicationFiled: November 13, 2006Publication date: July 12, 2007Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070157703Abstract: According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.Type: ApplicationFiled: March 19, 2007Publication date: July 12, 2007Applicant: GENERAL ELECTRIC COMPANYInventors: Vinayak Tilak, Kevin Matocha, Peter Sandvik
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Publication number: 20070144236Abstract: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.Type: ApplicationFiled: March 8, 2007Publication date: June 28, 2007Inventors: Edward Stokes, Peter Sandvik, Vinayak Tilak, Jeffrey Fedison, Elena Babes-Dornea, Renyan Qin, James Rose, Stanton Weaver
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Publication number: 20070086916Abstract: A faceted structure is provided that includes a crystalline composition comprising a metal nitride. The metal comprises one or more of aluminum, boron, indium, or gallium. The crystalline composition has at least one exposed surface that is a grain boundary, an etched surface, or a naturally formed facet, and the surface has the same crystallographic orientation of a substrate on which the crystalline composition is grown. A sensor device is provided that includes a faceted structure. Associated methods of making and using the faceted structure in a sensor device are provided.Type: ApplicationFiled: June 30, 2006Publication date: April 19, 2007Applicant: General Electric CompanyInventors: Steven LeBoeuf, Peter Sandvik, Radislav Potyrailo
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Publication number: 20070086915Abstract: An apparatus includes an article and a detector. The article includes a substrate, a faceted structure disposed on the substrate, and a sensor layer disposed on the faceted structure. The faceted structure is disposed on the substrate first surface and itself has a surface. The faceted structure surface has peripheral edge defining a diameter of the faceted structure surface. The sensor layer is disposed on the faceted structure surface. The sensor layer can react or can interact with a target species when the target species is sufficiently proximate to the sensor layer. The sensor layer responds to the reaction or to the interaction in a detectable manner. The detector detects a response to the reaction, or to the interaction, of the target species with the sensor layer.Type: ApplicationFiled: June 30, 2006Publication date: April 19, 2007Applicant: General Electric CompanyInventors: Steven LeBoeuf, Peter Sandvik, Radislav Potyrailo
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Publication number: 20070040181Abstract: A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.Type: ApplicationFiled: March 15, 2006Publication date: February 22, 2007Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20070012965Abstract: One photodetection system includes a wide bandgap photodetector array which is physically and electrically integrated on a flexible interconnect layer including electrical connections, which is packaged in a manner for being electrically integrated with processing electronics such that the packaging and the processing electronics are configured for obtaining and processing signals detected by the photodetector array, or which includes both the flexible interconnect layer and processing electronics packaging features. Another photodetection system includes a wide bandgap focal plane array module including a photodetector pixel array, scan registers, a substrate supporting the array and the scan registers, and electrical interconnections coupling each pixel to at least two of the scan registers.Type: ApplicationFiled: July 15, 2005Publication date: January 18, 2007Inventors: Peter Sandvik, Dale Brown, William Burdick, James Rose, Donna Sherman, Jonathan Short, Naresh Rao
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Publication number: 20060270053Abstract: According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.Type: ApplicationFiled: May 26, 2005Publication date: November 30, 2006Inventors: Vinayak Tilak, Kevin Matocha, Peter Sandvik
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Publication number: 20060169996Abstract: A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1.Type: ApplicationFiled: March 15, 2006Publication date: August 3, 2006Applicant: General Electric CompanyInventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20050101100Abstract: The invention is directed to a method for optical and electrical isolation between adjacent integrated devices. The method comprises the steps of forming at least one trench through an exposed surface of a semiconductor wafer by removing a portion of the semiconductor wafer material, forming an electrically insulating layer on the sidewalls and the bottom of the at least one trench, filling the at least one trench by conformally depositing an optically isolating material, and planarizing the semiconductor wafer surface by removing the portion of the optically isolating material above the exposed surface of the semiconductor wafer.Type: ApplicationFiled: November 6, 2003Publication date: May 12, 2005Inventors: James Kretchmer, Jeffrey Fedison, Dale Brown, Peter Sandvik
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Publication number: 20050098095Abstract: A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm?2, and is substantially free of tilt boundaries.Type: ApplicationFiled: December 13, 2004Publication date: May 12, 2005Inventors: Mark D'Evelyn, Dong-Sil Park, Steven LeBoeuf, Larry Rowland, Kristi Narang, Huicong Hong, Stephen Arthur, Peter Sandvik
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Publication number: 20050098844Abstract: An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials.Type: ApplicationFiled: November 19, 2004Publication date: May 12, 2005Inventors: Peter Sandvik, Dale Brown, Stephen Arthur, Kevin Matocha, James Kretchmer
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Publication number: 20050097941Abstract: A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.Type: ApplicationFiled: November 12, 2003Publication date: May 12, 2005Inventors: Peter Sandvik, Vinayak Tilak, Jesse Tucker, Stanton Weaver, David Shaddock, Jonathan Male, John Lemmon, Mark Woodmansee, Venkatesan Manivannan, Deborah Haitko