Abstract: A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.

Abstract: Embodiments provided herein describe pumps and methods for pumping fluids. A first fixed valve has a passageway extending therethrough with first and second ends. The first fixed valve is configured to allow fluid flow through the passageway towards the second end thereof and at least partially restrict fluid flow towards the first end thereof. A pumping structure is in fluid communication with the second end of the passageway of the first fixed valve. A second fixed valve has a passageway extending therethrough with third and fourth ends. The second fixed valve is configured to allow fluid flow through the passageway towards the fourth end thereof and at least partially restrict fluid flow towards the third end thereof. The third end of the passageway of the second fixed valve is in fluid communication with the pumping structure and the second end of the passageway of the first fixed valve.

Abstract: Methods and systems to control the temperature of a substrate during a physical vapor deposition (PVD) process are provided. A temperature controlled apertured shield can be disposed on the surface of the substrate, surrounding the substrate area that is subjected to the deposition process. The temperature controlled apertured shield can be actively cooled, for example, by a circulated coolant, which can absorb heat from the deposition region and maintaining a desired temperature for the deposited films. In some embodiments, the temperature controlled apertured shield can be used in a high productivity combinatorial (HPC) system, allowing screening of materials and process conditions.

Abstract: Provided are liquid agitating systems having magnetically actuated agitating members that do not come in contact with internal surfaces of liquid holding vessels. As such, some mechanically weak materials, such as polytetrafluoroethylene and perfluoroalkoxy polymer, may be used for internal surfaces of these vessels. An agitating member may be held by a supporting member that allows the agitating member to move within a vessel without touching its bottom. The supporting member effectively controls the distance between the agitating member and some supporting point. An external magnet provided under the vessel may be used for magnetic actuation. The agitating member includes an internal magnet that is magnetically coupled to the external magnet and that follows the path of the external magnet thereby moving the agitating member and agitating the liquid. In some embodiments, multiple external magnets may be used to position one or more agitating member.

Abstract: A chamber for combinatorially processing a substrate is provided. The chamber includes a first mask and a second mask that share a common central axis. The first mask and the second mask are independently rotatable around the common central axis. The first mask has a first plurality of radial apertures and the second mask has a second plurality of radial apertures. An axis of the first plurality of radial apertures is offset from an axis of the second plurality of radial apertures. A substrate support that is operable to support a substrate below the first and second masks is included. The substrate support shares the common central axis.

Abstract: A chamber for combinatorially processing a substrate is provided. The chamber includes a first mask and a second mask that share a common central axis. The first mask and the second mask are independently rotatable around the common central axis. The first mask has a first plurality of radial apertures and the second mask has a second plurality of radial apertures. An axis of the first plurality of radial apertures is offset from an axis of the second plurality of radial apertures. A substrate support that is operable to support a substrate below the first and second masks is included. The substrate support shares the common central axis.

Abstract: Embodiments provided herein describe substrate processing tools and showerheads. A substrate processing tool includes a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. A showerhead is coupled to the housing and positioned within the processing chamber above the substrate support. The showerhead includes a dielectric material and has a first surface with a plurality of fluid outlets, a second surface with a plurality of fluid ports, and first and second passageways extending therethrough. The first passageway is in fluid communication with the plurality of fluid outlets and a first of the plurality of fluid ports. The second passageway is in fluid communication with a second and a third of the fluid ports.

Abstract: A plurality of independent reaction cells are disposed within a single process module to allow the deposition of films using MOCVD wherein parameters of the deposition are varied in a combinatorial manner. In some embodiments of the present invention, a plurality of independent reaction cells are disposed within a isolated process modules configured in a linear fashion to allow the deposition of films using MOCVD wherein parameters of the deposition are varied in a combinatorial manner. The independent reaction cells may also be utilized to form multilayer film stacks that are varied in a combinatorial manner.

Abstract: A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method for etching a photomask includes placing a reticle upon a pedestal of a processing chamber, forming a plasma from a process gas, preferentially allowing neutrally charged radicals to pass through the plate relative to ions present in the plasma and etching a layer disposed on the reticle. In another embodiment, an apparatus for etching a photomask includes a process chamber having a substrate support pedestal disposed therein that is adapted to receive a photomask reticle thereon. An RF power source is provided for forming a plasma within a processing volume of the chamber. A plate having a plurality of holes formed therein is supported in the processing volume in an orientation substantially parallel to and a spaced apart from both the substrate support pedestal and a lid of the processing chamber.

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.

Abstract: The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.