Abstract: A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer. A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion. A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.

Abstract: A micromechanical component for a sensor device, including a substrate, at least one first counter-electrode, at least one first electrode adjustably situated on a side of the at least one first counter-electrode facing away from the substrate, and a capacitor sealing structure, which seals gas-tight an interior volume, including the at least one first counter-electrode present therein and the at least one first electrode present therein. The at least one first counter-electrode is fastened directly or indirectly to a frame structure fastened directly or indirectly to the substrate, and the frame structure framing a cavity, and the at least one first counter-electrode at least partially spanning the cavity in such a way that at least one gas is transferable between the cavity and the interior volume via at least one opening formed at and/or in the at least one first counter-electrode.

Abstract: A micromechanical component for a sensor or microphone device. The micromechanical component includes an actuator electrode, which is adjustably arranged on and/or in a cavity and is made of silicon, and a stator electrode, which is arranged in the cavity and is made of silicon and which is secured to an insulating layer. A vacuum or at least one gas is provided in the cavity, wherein the insulating layer delimits the cavity at least on the stator electrode side facing away from the actuator electrode, and the stator electrode is secured to the insulating layer via at least one support structure which protrudes through the insulating layer and is made of silicon such that at least one intermediate gap with a vacuum or the at least one gas of the cavity is provided between the stator electrode and the insulating layer.

Abstract: A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.

Abstract: A micromechanical component for a sensor device or microphone device. The micromechanical component includes a diaphragm with a diaphragm inner side to which an electrode structure is directly or indirectly connected; and a cavity that is formed at least in a volume that is exposed by at least one removed area of at least one sacrificial layer. At least one residual area made of at least one electrically insulating sacrificial layer material of the at least one sacrificial layer is also present at the micromechanical component, and including at least one insulation area made of at least one electrically insulating material that is not the same as the electrically insulating sacrificial layer material. The electrode structure is electrically insulated from the diaphragm, and/or the at least one residual area of the at least one sacrificial layer is delimited from the cavity, using the at least one insulation area.

Abstract: A micromechanical pressure sensor element. The micromechanical pressure sensor element includes: a substrate; and a layer structure formed on the substrate. The layer structure includes a top electrode, a bottom electrode, and a movable central electrode arranged between the top and bottom electrodes. The central electrode is formed in flat fashion without a stepped boundary section. The layer structure has a planar surface directly after the production of the central electrode.

Abstract: A contact element of a MEMS relay. The contact element includes a defined number greater than one of electrically conductive contact bodies, wherein the contact bodies are arranged at least partially within a layer that is plastically deformable in a defined manner, wherein a hardness of the plastically deformable layer is less than a hardness of the contact bodies, wherein, by exerting a compressive force on the contact bodies, the contact bodies can be pressed into the plastically deformable layer and brought to a substantially uniform height level, and wherein the plastically deformable layer is arranged at least partially within an insulation layer.

Abstract: A method for producing a particle protection element. The method include: providing a substrate; applying a first silicon dioxide layer to a surface of the substrate and structuring the first SiO2 layer, a height of a later plurality of media passage structures of the particle protection element, which form a filter function with respect to penetrating particles, can be set based on a thickness of the first SiO2 layer; depositing a first polysilicon layer onto a surface of the first silicon dioxide layer and/or of the substrate, and structuring the first poly-Si layer for forming a later at least one first channel structure; and forming a later at least one second channel structure on the rear side of the substrate, wherein the later first channel structure and/or the later media passage structures and/or the later second channel structure are connectable with regard to a media flow.

Abstract: A method for forming a layer structure surrounding at least one recess. The method includes: structuring a multitude of depressions in a first semiconductor layer of the later layer structure such that the depressions form at least one contiguous recess, including a plurality of depressions, in the first semiconductor layer, into which wall structures structured out of the first semiconductor layer by means of the depressions project; at least partially areally covering the at least one recess by forming at least one second semiconductor layer from the at least one identical material to the first semiconductor layer; and introducing a medium through at least one medium supply opening into the at least one recess, which medium chemically reacts with the projecting wall structures.

Abstract: A method for producing a wafer connection between a first and a second wafer. The method includes providing a first and second material for forming a eutectic alloy, providing a first wafer having a receiving structure for a die structure, filling the receiving structure with the first material, providing a second wafer having a die structure, the second material being situated on the die structure, providing a stop structure on the first and/or second wafer, so that when the two wafers are joined, a defined stop is provided, heating the first and second material at least to the eutectic temperature of the eutectic alloy, joining the first and second wafer so that the die structure is at least partly introduced into the receiving structure, the stop structure, the receiving structure, the die structure.

Abstract: A method for manufacturing a polysilicon SOI substrate including a cavity. The method includes: providing a silicon substrate including a sacrificial layer thereon; producing a first polysilicon layer on the sacrificial layer; depositing a structuring layer on the first polysilicon layer; introducing trenches through the structuring layer, the first polysilicon layer, and the sacrificial layer up to the silicon substrate; producing a cavity in the silicon substrate by etching, an etching medium being conducted thereto through the trenches; producing a second polysilicon layer on the first polysilicon layer, the trenches being thereby closed. A micromechanical device is also described.

Abstract: A micromechanical component for a capacitive pressure sensor device, including a diaphragm that is stretched with the aid of a frame structure in such a way that a cantilevered area of the diaphragm spans a framed partial surface, and including a reinforcement structure that is formed at the cantilevered area. A first spatial direction oriented in parallel to the framed partial surface is definable in which the cantilevered area has a minimal extension, and a second spatial direction oriented in parallel to the framed partial surface and oriented perpendicularly with respect to the first spatial direction is definable in which the cantilevered area has a greater extension. The reinforcement structure is present at a first distance from the frame structure in the first spatial direction, and at a second distance in the second spatial direction, the second distance being greater than the first distance.

Abstract: A micromechanical component for a capacitive pressure sensor device includes a substrate; a frame structure that frames a partial surface; a membrane that is tensioned by the frame structure such that a self-supporting region of the membrane extends over the framed partial surface and an internal volume with a reference pressure therein is sealed in an airtight fashion, the self-supporting region of the membrane being deformable by a physical pressure on an external side of the self-supporting region that not equal to the reference pressure; a measurement electrode situated on the framed partial surface; and a reference measurement electrode that is situated on the framed partial surface and is electrically insulated from the measurement electrode.

Abstract: A sensor device having a first counter electrode extending under an intermediate carrier, and having a first distance between the intermediate carrier and the first counter electrode being modifiable by the pressure on the movable region, and the first counter electrode encompassing, under the intermediate carrier, at least one electrically separated region that is disposed below a spacing element and includes at least a lateral extent of the spacing element.

Abstract: A micromechanical component, whose diaphragm is supported and has support structures on its inner diaphragm side. Each of the support structures includes a first and second edge element structure, and at least one intermediate element structure positioned between the first and second edge element structures. For each of the support structures, a plane of symmetry is definable, with respect to which at least the first edge element structure of the respective support structure and the second edge element structure of the respective support structure are specularly symmetric. In each of support structures, a first maximum dimension of its first edge element structure perpendicular to its plane of symmetry and a second maximum dimension of its second edge element structure perpendicular to its plane of symmetry are greater than the maximum dimension of its intermediate element structure perpendicular to its plane of symmetry.

Abstract: A production method for a micromechanical component for a sensor or microphone device. The method includes: patterning a plurality of first trenches through a substrate surface of a monocrystalline substrate made of at least one semiconductor material using anisotropic etching, covering the lateral walls of the plurality of first trenches with a passivation layer, while bottom areas of the plurality of first trenches are kept free or are freed of the passivation layer, etching at least one first cavity, into which the plurality of first trenches opens, into the monocrystalline substrate using an isotropic etching method, in which an etching medium of the isotropic etching method is conducted through the plurality of first trenches, and by covering the plurality of first trenches by epitaxially growing a monocrystalline sealing layer on the substrate surface of the monocrystalline substrate made of the at least one identical semiconductor material as the monocrystalline substrate.

Abstract: A micromechanical component for a sensor and/or microphone device. The component has an adjustable first actuator electrode suspended on a regionally deformable first layer, a first stator electrode fastened so that a first measuring signal is able to be tapped with regard to a first voltage or capacitance applied between the first actuator electrode and the first stator electrode, and a second actuator electrode, so that a second measuring signal is able to be tapped with regard to a second voltage or capacitance applied between the second actuator electrode and the first stator electrode or between the second actuator electrode and the second stator electrode. The second actuator electrode is situated in an adjustable manner on a side of the first actuator electrode facing away from the first layer in that the second actuator electrode is suspended on the first actuator electrode and/or an at least regionally deformable second layer.

Abstract: A method for sealing entries in a MEMS element. The method includes: providing a functional layer having a functional region; producing a cavity underneath the functional region of the functional layer with the aid of a first entry outside of the functional region of the functional layer; sealing the first entry; producing a second entry to the cavity outside of the functional region of the functional layer; melting sealing material in the region of the second entry; and cooling off the melted sealing material to seal the second entry.

Abstract: A sensor device. The sensor device includes a housing component with a gas-tight internal volume, at least one electrode structure arranged in the internal volume in an adjustable and/or bendable manner, at least one counter electrode fixedly disposed on and/or in the housing component, and an electronic device configured to apply an electrical excitation voltage signal between the electrode structure and the counter electrode such that the at least one electrode structure is set in an oscillating motion relative to the housing component. The electronic device is configured to detect and/or determine the internal pressure in the internal volume and/or a change in the internal pressure while taking into consideration at least one sensor signal, which is dependent on an electric voltage or capacitance between the electrode structure and the counter electrode.

Abstract: A production method for a micromechanical component for a sensor device or microphone device. The method includes: forming a supporting structure composed of a first sacrificial material on a substrate surface of a substrate with a first sacrificial material layer, a plurality of etching holes structured through the first sacrificial material layer, and a plurality of supporting posts projecting into the substrate; etching into the substrate surface at least one cavity spanned by the supporting structure; forming a diaphragm composed of at least one semiconductor material on or over the first sacrificial material layer of the supporting structure; depositing a layer stack comprising at least one sacrificial layer and at least one counter electrode; and exposing the diaphragm by at least partially removing at least the supporting structure and the at least one sacrificial layer.