Abstract: Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.

Abstract: Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.

Abstract: Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.

Abstract: Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.

Abstract: Multiple function stable circuitry measures both pressure and temperature for example. It includes both a pressure sensitive capacitor, and fixed reference capacitor, and also includes both a constant current source and a temperature variable current source. The complete cycle includes at least two phases, with one phase of the cycle utilizing one reference capacitor and one pressure variable capacitor; and at least one other phase including the reference capacitor and at least one temperature variable charging source. Other multiple slope multiple functions may also be implemented.