Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon 5 nitride, a second layer including Ag, a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers, a fourth layer including Ag, and a fifth layer including silicon nitride, where the color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon 5 nitride, a second layer including Ag, a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers, a fourth layer including Ag, and a fifth layer including silicon nitride, where the color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: An apparatus for measuring the reflectance properties of an object having a front reflecting surface and at least one back reflecting surface. The apparatus includes a sample stage for placement of the object, a light source, a detector configured to detect reflected light from the object, and a positioning device configured to provide a plurality of angular positions for the light source and the detector relative to the object on the sample stage such that incident light on the object is specularly reflected towards the detector and the reflected light received at the detector includes a front surface reflection from the object and at least one back surface reflection from the object.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag.

Abstract: An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.

Abstract: Two adjacent rotating cylindrical targets are used in a specific form of a vacuum sputtering system to deposit a film of material onto a substrate. Elongated anodes are provided on opposite sides and in between the targets in a manner to make more uniform the rate of deposition across the substrate.

Abstract: In one group of embodiments, two or more small anodes are spaced apart from one another in a magnetron, with some aspect of their electrical power being individually controlled in a manner to control a density profile across a plasma. In another group of embodiments, the same effect is obtained by mechanically moving one or more small anodes or anode masks. When used in a magnetron having either a rotating cylindrical cathode or a stationary planar cathode and designed to sputter films of material onto a substrate, the uniformity of the rate of deposition across the substrate is improved. Also, adverse effects of sputtering dielectric materials are reduced.

Abstract: An improved shield structure for use in a sputtering apparatus for depositing a film on a substrate is disclosed. The cylindrically shaped shield structure, which extends over the ends of a cylindrical sputtering target, has at least one annular structure extending around an outside surface of the shield. The annular structure is dimensioned to interrupt or suppress movement of any arc which might otherwise travel across its outside surface. In a preferred embodiment, the annular structure is a groove capable of trapping any such arc therein and preventing its escape therefrom. In another preferred embodiment, the improved shield structure is electrically isolated such that it is prevented from becoming an anode. In this manner, the electrically isolated shield structure inhibits the formation of severe arcs between it and the cathodic target.

Abstract: An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.

Abstract: A rotating cylindrical sputtering target surface as part of a magnetron has cylindrical shields adjacent each end of the target that are shaped at their respective inner edges to maximize etching and to prevent condensation and subsequent arcing that undesirably occurs when certain materials, particularly dielectrics, are being sputtered. If two or more rotating targets are employed in a single magnetron system, each is similarly shielded. In an alternative form, the target is provided with a single cylindrical shield that is cut away for a significant portion of the distance around the cylinder to provide an opening through which a sputtering region of the target is accessible, while maintaining shielding of the target end regions. This alternative single shield is similarly shaped at portions of its inner edges adjacent to the opening to maximize etching and to prevent undesired condensation and subsequent arcing.

Abstract: A planar magnetron sputtering device with improved target utilization and cooling capacity is provided. The device includes a magnet yoke as the main structure of the cathode body. The magnet yoke is made of low carbon steel which provides magnetic shunt and physical strength. The target is attached to a metal backing plate so that the side surface of the target is substantially flush with the side surface of the backing plate. Suitable magnets are adapted for producing a closed-loop magnetic field over the lower surface of the target. The magnets include an outer magnet that has an annular structure positioned around an inner elongated magnet. The outer magnets are positioned along the perimeter of the backing plate and small magnets are employed to create larger active target area. The magnet yoke also comprises extension structures which are positioned along the side surface of the target. These extensions shunt the magnetic field at the edges of the target.