Abstract: A device, system, method, business method, and process of monitoring at least one machine tool including: determining a target signal of a component of the machine tool when performing a work step on the basis of at least one pre-definable or predefined reference number; detecting a current signal of the component of the machine tool when performing the work step; detecting a deviation of the target signal from the current signal; and generating a deviation signal. The deviation signal includes a piece of information about the component, the machine tool, and/or the deviation. The device, system, method, business method, and process of monitoring at least one machine tool further includes transferring the deviation signal as a new data set to an externally accessible storage unit that is separate or separable from the machine tool.

Abstract: A device, system, method, business method, and process of monitoring at least one machine tool including: determining a target signal of a component of the machine tool when performing a work step on the basis of at least one pre-definable or predefined reference number; detecting a current signal of the component of the machine tool when performing the work step; detecting a deviation of the target signal from the current signal; and generating a deviation signal. The deviation signal includes a piece of information about the component, the machine tool, and/or the deviation. The device, system, method, business method, and process of monitoring at least one machine tool further includes transferring the deviation signal as a new data set to an externally accessible storage unit that is separate or separable from the machine tool.

Abstract: Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than ?15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (?) Hz.

Abstract: The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.

Abstract: Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than ?15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (?) Hz.

Abstract: The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.

Abstract: The present invention relates to sub-millimeter wave frequency heterodyne imaging systems. More specifically, the present invention relates to a sub-millimeter wave frequency heterodyne detector system for imaging the magnitude and phase of transmitted power through or reflected power off of mechanically scanned samples at sub-millimeter wave frequencies.

Abstract: Sulfonic acid-N'-methylamide-N'-sulfenyl-N-methyl-carbamic acid esters of the formula ##STR1## in which R.sup.1 is dialkylamino with 1-4 carbon atoms in each alkyl group, phenyl substituted in the o- or m-position by halogen or by alkyl with 1-4 carbon atoms, or phenyl substituted in the o-, m- or p-position by NO.sub.2, CF.sub.3 or CN, andR.sup.2 is phenyl, naphthyl, benzodioxolanyl or indanyl; phenyl, naphthyl, benzodioxolanyl or indanyl substituted by trihalogenomethyl, halogen, nitro, cyano, formamidino, dioxanyl or dioxolanyl, or by alkyl, alkenyl, alkynyl, alkoxy, alkenoxy, alkynoxy, alkylmercapto, alkenylmercapto or dialkylamino wherein each hydrocarbon portion has 1-4 carbon atoms; cycloalkyl of 5-7 carbon atoms, or ##STR2## in which R .sup.3 and R.sup.4 each independently is cyano or alkyl, alkoxy, alkylthio or alkoxycarbonyl with 1-4 carbon atoms in each alkyl group, or R.sup.3 and R.sup.4 together form a ring, or, provided that R.sup.1 is a NO.sub.2 -substituted phenyl, R.sup.3 and R.sup.