Abstract: A semiconductor wafer processing system for processing a set of semiconductor wafers includes a bond treat station including an oven, a cleave station including a cleave assembly for cleaving the wafer, a transfer robot, and a controller for controlling the transfer robot. The controller is programmed to control the transfer robot to retrieve a first wafer of the set of semiconductor wafers from the bond treat station and control the transfer robot to deliver the first wafer to the cleave station for processing by the cleave assembly.

Abstract: A method performs phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating. Additionally, a system and a non-transitory computer-readable storage medium have computer-executable instructions embodied thereon for performing phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating.

Abstract: A method performs phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating. Additionally, a system and a non-transitory computer-readable storage medium have computer-executable instructions embodied thereon for performing phase shift interferometry to detect irregularities of a surface of a wafer after the wafer has been placed into an interferometer and while the wafer is vibrating.

Abstract: A computer-implemented method for arranging numeric data for compression is described. The method is implemented using a computing device in communication with a memory and a measurement device. The method includes receiving, by the computing device and from the measurement device, numeric data that includes a sequence of numbers, each number including at least a first byte followed by a second byte. The method additionally includes arranging the first bytes into a first contiguous set, arranging the second bytes into a second contiguous set, and storing the first contiguous set and the second contiguous set in a file in the memory, such that the first contiguous set is contiguous with the second contiguous set.

Abstract: A computer-implemented method for arranging numeric data for compression is described. The method is implemented using a computing device in communication with a memory and a measurement device. The method includes receiving, by the computing device and from the measurement device, numeric data that includes a sequence of numbers, each number including at least a first byte followed by a second byte. The method additionally includes arranging the first bytes into a first contiguous set, arranging the second bytes into a second contiguous set, and storing the first contiguous set and the second contiguous set in a file in the memory, such that the first contiguous set is contiguous with the second contiguous set.

Abstract: An example memory cell may have at least a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region can have at least an active interface regio disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.

Abstract: A data storage device and associated method for providing current magnitude compensation for memory cells in a data storage array. In accordance with some embodiments, unit cells are connected between spaced apart first and second control lines of common length. An equalization circuit is configured to respectively apply a common current magnitude through each of the unit cells by adjusting a voltage applied to the cells in relation to a location of each of the cells along the first and second control lines.

Abstract: A data storage device and associated method for providing current magnitude compensation for memory cells in a data storage array. In accordance with some embodiments, unit cells are connected between spaced apart first and second control lines of common length. An equalization circuit is configured to respectively apply a common current magnitude through each of the unit cells by adjusting a voltage applied to the cells in relation to a location of each of the cells along the first and second control lines.

Abstract: A non-volatile memory cell and method of use therefore are disclosed. In accordance with various embodiments, the memory cell comprises a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region comprises an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the active interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.

Abstract: An apparatus includes a first ferroelectric storage layer and a second ferroelectric storage layer adjacent the first ferroelectric storage layer. A coupling layer may be between the first ferroelectric storage layer and the second ferroelectric storage layer. The ferroelectric storage layers may be configured as a data storage medium for use in a data storage system. A related method is also disclosed.

Abstract: An apparatus comprises mechanically scanned ferroelectric data storage media. A scanning electrode contacts the scannable surface with a contact force. The ferroelectric data storage media generates a piezoelectric potential that is picked up by the electrode. The piezoelectric potential has a polarity that varies as a function of data polarity on the data storage media.

Abstract: An apparatus includes a first ferroelectric storage layer and a second ferroelectric storage layer adjacent the first ferroelectric storage layer. A coupling layer may be between the first ferroelectric storage layer and the second ferroelectric storage layer. The ferroelectric storage layers may be configured as a data storage medium for use in a data storage system. A related method is also disclosed.

Abstract: An apparatus comprises mechanically scanned ferroelectric data storage media. A scanning electrode contacts the scannable surface with a contact force. The ferroelectric data storage media generates a piezoelectric potential that is picked up by the electrode. The piezoelectric potential has a polarity that varies as a function of data polarity on the data storage media.

Abstract: The invention relates to a barless mold closing device for injection molding machines, which absorbs the mold closing and opening forces via a C-shaped machine frame, in which plate bending is minimized by asymmetrical internal die forces and eccentric opening forces and the load on the die guides and in which it is possible to automatically compensate for non-parallelisms at the die parting line. The solution calls for the fixed die mounting plate 2 and/or the end plate 4 to be supported in two horizontal bearing axes 9, 10 and 11, 12 above and below the axis of injection 7. The lower bearing axes 10, 12 are connected to the fixed die mounting plate 2 and/or to the end plate 4 via elastically deformable components 13 in such a way that these components are connected to the elastic deformation of the machine frame 1, so that there is no angular deviation from the vertical position of the mounting surfaces 2.1, 3.1.