Abstract: An X-ray detector comprises: a semiconductor bulk made of Cd(1-x)ZnxTe, wherein x is in a range of 0 to 50%; a contact made of a first material on the semiconductor bulk; and a contact-semiconductor region, which is part of the semiconductor bulk and is adjacent to the contact. The contact-semiconductor region is doped with a second material, which differs from the first material, and a majority of the semiconductor bulk is not doped with the second material.

Abstract: An X-ray detector includes a stack arrangement with a scattered radiation grid and a planar converter element including a first surface and a second surface. The converter element includes a first electrode embodied on the first surface and a pixelated second electrode with two adjacent first electrode elements. The two adjacent first electrode elements include a first width and a first length and the two adjacent first electrode elements are embodied the second surface opposite the first surface. The scattered radiation grid includes a grid wall with a thickness along the boundary between the two adjacent first electrode elements. The grid wall is arranged to be substantially perpendicular on the first surface and, in a projection, substantially parallel to the direction of incidence of the radiation and to the surface normal of the first surface. The grid wall at least partially overlaps the two adjacent first electrode elements.

Abstract: A method is described for determining the polarization state of a sensor of an X-ray detector. In the method, the X-ray detector is illuminated with a sequence of light pulses wherein the individual pulses of the light pulse sequence have a different intensity. It is further determined at what intensity of the light pulses, charge pulses generated by the sensor of the X-ray detector exceed a threshold voltage of a signal detection circuit. Also described is a method for obtaining and/or setting functional data of a sensor of an X-ray detector and/or of a sensor illumination unit. Furthermore, an X-ray detector is described.

Abstract: An X-ray detector includes a stack arrangement with a scattered radiation grid and a planar converter element including a first surface and a second surface. The converter element includes a first electrode embodied on the first surface and a pixelated second electrode with two adjacent first electrode elements. The two adjacent first electrode elements include a first width and a first length and the two adjacent first electrode elements are embodied the second surface opposite the first surface. The scattered radiation grid includes a grid wall with a thickness along the boundary between the two adjacent first electrode elements. The grid wall is arranged to be substantially perpendicular on the first surface and, in a projection, substantially parallel to the direction of incidence of the radiation and to the surface normal of the first surface. The grid wall at least partially overlaps the two adjacent first electrode elements.

Abstract: A method is described for determining the polarization state of a sensor of an X-ray detector. In the method, the X-ray detector is illuminated with a sequence of light pulses wherein the individual pulses of the light pulse sequence have a different intensity. It is further determined at what intensity of the light pulses, charge pulses generated by the sensor of the X-ray detector exceed a threshold voltage of a signal detection circuit. Also described is a method for obtaining and/or setting functional data of a sensor of an X-ray detector and/or of a sensor illumination unit. Furthermore, an X-ray detector is described.

Abstract: An X-ray detector is disclosed. According to an embodiment of the invention, the X-ray detector includes at least two adjacently arranged detector elements, to each of which a high voltage is applied in order to detect incident X-rays. In this case, two adjacent detector elements are coupled to one another by way of a protection circuit, designed to limit a voltage difference between the two adjacent detector elements to a voltage value which is non-critical with regard to the formation of a flashover between the two detector elements.

Abstract: An X-ray detector is disclosed. According to an embodiment of the invention, the X-ray detector includes at least two adjacently arranged detector elements, to each of which a high voltage is applied in order to detect incident X-rays. In this case, two adjacent detector elements are coupled to one another by way of a protection circuit, designed to limit a voltage difference between the two adjacent detector elements to a voltage value which is non-critical with regard to the formation of a flashover between the two detector elements.