Abstract: Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Abstract: Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Abstract: Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Abstract: A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers, selectively controlling process fluid flow to the process chamber for a first period of time corresponding to a time value of the set of time values and to a divert foreline of the process chamber for a second period of time.

Abstract: A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers, selectively controlling process fluid flow to the process chamber for a first period of time corresponding to a time value of the set of time values and to a divert foreline of the process chamber for a second period of time.

Abstract: A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers: causing the process fluid to flow to the processing chamber for a first period of time corresponding to a first time value; and causing the process fluid to flow to a divert foreline of the processing chamber for a second period of time, the second period of time being based on a timestep of the operation and the time value.

Abstract: A method includes identifying time values for a length of time to carry out process fluid delivery within multiple processing chambers that concurrently process multiple substrates; translating each time value to a recipe parameter for execution of an operation of a processing recipe; and causing the operation to be performed using each recipe parameter as a control value to control valves of a fluid panel of the multiple processing chambers. For each processing chamber of the multiple processing chambers: causing the process fluid to flow to the processing chamber for a first period of time corresponding to a first time value; and causing the process fluid to flow to a divert foreline of the processing chamber for a second period of time, the second period of time being based on a timestep of the operation and the time value.