Abstract: The invention relates to a method of preparing a sample for analysis. The method comprises: providing a sample comprising a surface region of interest on a first face of the sample and a second face oriented at an angle to the first face about a common edge between the first and second faces, the second face extending between the common edge and a second edge on the opposing side of the second face of the sample; and milling the second face of the sample to provide a trench in the surface of the second face, the trench extending from a first position on the second face between the common edge and the second edge to a second position adjacent to the common edge; wherein the trench is arranged so as to provide an electron transparent sample layer comprising the surface region of interest. By milling the second face of the sample only, a surface region of interest on the first face of the sample is fully preserved and remains free of milling beam induced damage.

Abstract: A detector module for use in an apparatus for analysing a specimen is provided. The detector module comprises a plurality of X-ray sensor elements and one or more electron sensor elements, and is adapted to be positioned below a polepiece of an electron beam assembly of the apparatus from which an electron beam generated by the assembly emerges towards a specimen in use, such that the detector module receives X-rays and backscattered electrons generated by interaction between the electron beam and the specimen. Each of the plurality of X-ray sensor elements is configured to monitor energies of individual received X-ray photons, and the plurality of X-ray sensor elements have a total active area greater than 20 mm2. The radial extent of the detector module with respect to the electron beam axis in use is less than 10 mm for at least a first portion of the detector module. An apparatus and method for analysing a specimen are also provided.

Abstract: A method and system for analyzing a specimen in a microscope are disclosed.

Abstract: An apparatus for detecting Kikuchi diffraction patterns is provided. The apparatus comprises: an electron column adapted in use to provide an electron beam directed towards a sample, the electron beam having an energy in the range 2 keV to 50 keV, and; an imaging detector for receiving and counting electrons from the sample due to interaction of the electron beam with the sample, the detector comprising an array of pixels and having a count rate capability of at least 2,000 electrons per second for each pixel, wherein: the imaging detector is adapted to provide electronic energy filtering of the received electrons in order to count the received electrons which are representative of the said diffraction pattern, and the particle detector has an inert layer on the surface where the electrons enter towards the active region of the detector, wherein the inert layer disperses the detected energy of 20 keV incident electrons with an energy spread having a full-width half maximum less than 3.2 keV.

Abstract: A method and system for processing a diffraction pattern image obtained in an electron microscope are disclosed.

Abstract: A method and system for analyzing a specimen in a microscope are disclosed.

Abstract: A method and system for processing a diffraction pattern image obtained in an electron microscope are disclosed.

Abstract: A method is provided of measuring the mass thickness of a target sample for use in electron microscopy. Reference data are obtained which is representative of the X-rays (28) generated within a reference sample (12) when a particle beam (7) is caused to impinge upon a region (14) of the reference sample (12). The region (14) is of a predetermined thickness of less than 300 nm and has a predetermined composition. The particle beam (7) is caused to impinge upon a region (18) of the target sample (16). The resulting X-rays (29) generated within the target sample (16) are monitored (27) so as to produce monitored data. Output data are then calculated based upon the monitored data and the reference data, the output data including the mass thickness of the region (18) of the target sample (16).

Abstract: A method is provided for processing a spectrum, obtained using a particle detection system, so as to reduce spectrum artifacts arising from unresolved particle events in the detection system. An input spectrum is obtained which contains artifacts due to “pile up” in the detector. A first effect upon the input spectrum of pairs of unresolved particle events is evaluated and a first corrected input spectrum is generated which comprises the input spectrum with the first effect removed. The effect of a pairs of unresolved particle events is then evaluated for this first corrected input spectrum so as to generate a second corrected input spectrum which comprises the input spectrum with the second effect removed. An output spectrum is then generated based upon a combination of the first and second corrected input spectra. The use of the method in improving sum spectra is also discussed.

Abstract: A method is provided of measuring the mass thickness of a target sample for use in electron microscopy. Reference data are obtained which is representative of the X-rays (28) generated within a reference sample (12) when a particle beam (7) is caused to impinge upon a region (14) of the reference sample (12). The region (14) is of a predetermined thickness of less than 300 nm and has a predetermined composition. The particle beam (7) is caused to impinge upon a region (18) of the target sample (16). The resulting X-rays (29) generated within the target sample (16) are monitored (27) so as to produce monitored data. Output data are then calculated based upon the monitored data and the reference data, the output data including the mass thickness of the region (18) of the target sample (16).

Abstract: An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.

Abstract: A method is provided of reducing the thickness of a region of a target sample. Reference data is obtained that is representative of x-rays generated by a particle beam being directed upon part of a reference sample under a first set of beam conditions. Under a second set of beam conditions the particle beam is directed upon the region of the target sample. The resultant x-rays are monitored as monitored data. Output data are then calculated based upon the reference and the monitored data. Material is then removed from the region, so as to reduce its thickness, in accordance with the output data.

Abstract: An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.

Abstract: A method is provided for processing a spectrum, obtained using a particle detection system, so as to reduce spectrum artifacts arising from unresolved particle events in the detection system. An input spectrum is obtained which contains artifacts due to “pile up” in the detector. A first effect upon the input spectrum of pairs of unresolved particle events is evaluated and a first corrected input spectrum is generated which comprises the input spectrum with the first effect removed. The effect of a pairs of unresolved particle events is then evaluated for this first corrected input spectrum so as to generate a second corrected input spectrum which comprises the input spectrum with the second effect removed. An output spectrum is then generated based upon a combination of the first and second corrected input spectra. The use of the method in improving sum spectra is also discussed.

Abstract: A method is provided of reducing the thickness of a region of a target sample. Reference data is obtained that is representative of x-rays generated by a particle beam being directed upon part of a reference sample under a first set of beam conditions. Under a second set of beam conditions the particle beam is directed upon the region of the target sample. The resultant x-rays are monitored as monitored data. Output data are then calculated based upon the reference and the monitored data. Material is then removed from the region, so as to reduce its thickness, in accordance with the output data.

Abstract: A method of identifying a material using an x-ray emission characteristic is provided. X-ray data representing a monitored x-ray emission characteristic is obtained from a specimen in response to an incident energy beam. A dataset is also obtained, this comprising composition data of a plurality of materials. The material of the specimen is contained within the dataset. Predicted x-ray data are calculated for each of the materials in the dataset using the composition data. The obtained and the predicted x-ray data are compared and the likely identity of the material of the specimen is determined, based upon the comparison.