Patents by Inventor Peter Stau?
Peter Stau? has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220393059Abstract: In an embodiment a component composite includes an auxiliary carrier, a plurality of components, a retaining structure and an electrically conductive sacrificial layer, wherein each of the components has a connection layer which faces the sacrificial layer and is electrically conductively connected to the sacrificial layer, wherein the sacrificial layer is arranged in vertical direction between the auxiliary carrier and the components, and wherein the sacrificial layer is to be removable and the components are mechanically connected to the auxiliary carrier only via the retaining structure in addition to the sacrificial layer.Type: ApplicationFiled: October 6, 2020Publication date: December 8, 2022Inventors: Korbinian Perzlmaier, Peter Stauß, Alexander F. Pfeuffer, Christoph Klemp, Kerstin Neveling, Andreas Biebersdorf
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Patent number: 10510916Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.Type: GrantFiled: May 26, 2017Date of Patent: December 17, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Mohammad Tollabi Mazraehno, Peter Stauß, Alvaro Gomez-Iglesias
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Publication number: 20190221703Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.Type: ApplicationFiled: May 26, 2017Publication date: July 18, 2019Applicant: OSRAM Opto Semiconductors GmbHInventors: Mohammad Tollabi Mazraehno, Peter Stauß, Alvaro Gomez-Iglesias
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Publication number: 20190109246Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.Type: ApplicationFiled: November 20, 2018Publication date: April 11, 2019Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 10164134Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.Type: GrantFiled: March 29, 2016Date of Patent: December 25, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Publication number: 20180062031Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.Type: ApplicationFiled: March 29, 2016Publication date: March 1, 2018Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 9806224Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.Type: GrantFiled: January 28, 2014Date of Patent: October 31, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauβ, Patrick Rode
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Publication number: 20150364641Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.Type: ApplicationFiled: January 28, 2014Publication date: December 17, 2015Inventors: Werner Bergbauer, Philipp Drechsel, Peter Stauß, Patrick Rode
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Patent number: 9093604Abstract: A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.Type: GrantFiled: October 21, 2011Date of Patent: July 28, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauβ, Alexander Behres
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Patent number: 8828768Abstract: A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: GrantFiled: September 28, 2010Date of Patent: September 9, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauβ, Philipp Drechsel
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Patent number: 8598705Abstract: A composite substrate for a semiconductor chip includes a first covering layer containing a semiconductor material, a second covering layer, and a core layer arranged between the first covering layer and the second covering layer, wherein the core layer has a greater coefficient of thermal expansion than the covering layers.Type: GrantFiled: November 9, 2009Date of Patent: December 3, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Jürgen Moosburger, Peter Stauβ, Andreas Plöβl
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Publication number: 20130200432Abstract: A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.Type: ApplicationFiled: July 7, 2011Publication date: August 8, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Peter Stauß, Patrick Rode, Philipp Drechsel
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Patent number: 8212285Abstract: The invention specifies a radiation detector for detecting radiation (8) according to a predefined spectral sensitivity distribution (9) that exhibits a maximum at a predefined wavelength ?0, comprising a semiconductor body (1) with an active region (5) serving to generate a detector signal and intended to receive radiation, in which according to one embodiment the active region (5) includes a plurality of functional layers (4a, 4b, 4c, 4d) that have different band gaps and/or thicknesses and are implemented such that they (4a, 4b, 4c, 4d) at least partially absorb radiation in a range of wavelengths greater than ?0. According to a further embodiment, disposed after the active region is a filter layer structure (70) comprising at least one filter layer (7, 7a, 7b, 7c), said filter layer structure determining the short-wave side (101) of the detector sensitivity (10) according to the predefined spectral sensitivity distribution (9) by absorbing wavelengths smaller than ?0.Type: GrantFiled: March 10, 2005Date of Patent: July 3, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Arndt Jaeger, Peter Stauβ, Reiner Windisch
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Patent number: 7525083Abstract: A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.Type: GrantFiled: September 29, 2005Date of Patent: April 28, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Arndt Jaeger, Peter Stauβ
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Publication number: 20080237633Abstract: The invention specifies a radiation detector for detecting radiation (8) according to a predefined spectral sensitivity distribution (9) that exhibits a maximum at a predefined wavelength ?0, comprising a semiconductor body (1) with an active region (5) serving to generate a detector signal and intended to receive radiation, in which according to one embodiment the active region (5) includes a plurality of functional layers (4a, 4b, 4c, 4d) that have different band gaps and/or thicknesses and are implemented such that they (4a, 4b, 4c, 4d) at least partially absorb radiation in a range of wavelengths greater than ?0. According to a further embodiment, disposed after the active region is a filter layer structure (70) comprising at least one filter layer (7, 7a, 7b, 7c), said filter layer structure determining the short-wave side (101) of the detector sensitivity (10) according to the predefined spectral sensitivity distribution (9) by absorbing wavelengths smaller than ?0.Type: ApplicationFiled: March 10, 2005Publication date: October 2, 2008Inventors: Arndt Jaeger, Peter Staus, Reiner Windisch