Abstract: A method for determining an amount of metallic impurities within silicon. The method includes the steps of (a) providing a rodlike silicon sample and a rodlike seed crystal in a zone melting apparatus, (b) zone melting to form a single silicon crystal having a conical end region with a droplike melt forming at the end of the single silicon crystal in a separation step, (c) cooling of the droplike melt to form a solidified silicon drop, (d) partial or complete dissolution of the silicon drop in an acid, and analyzing the solution obtained in step (d) by a trace analysis technique. Wherein the separation step further includes a remelting step for the silicon sample to reduce its diameter, forming a droplike melting zone, and separation of the seed crystal and the silicon sample by moving the seed crystal and the silicon sample apart from one another.