Abstract: The invention relates to a method of fabricating a CMOS device, comprising providing a semiconductor substrate (101) having therein a layer of insulating material (102), the method comprising providing a layer (106) of a first material over the insulating layer (102), the thickness of the layer (106) of the first material being less in a first region (103) for supporting a first active device than in a second region (104) for supporting a second active device. A layer (107) of a second material is then deposited over the layer (106) of a first material, and the structure is then subjected to a thermal treatment to alloy the first and second materials. The portion of the layers over the first region is entirely alloyed, whereas the portion of the layers over the second region is not, so that a portion (109) of the layer (106) of the first material remains.

Abstract: The invention relates to a method of fabricating a CMOS device, comprising providing a semiconductor substrate (101) having therein a layer of insulating material (102), the method comprising providing a layer (106) of a first material over the insulating layer (102), the thickness of the layer (106) of the first material being less in a first region (103) for supporting a first active device than in a second region (104) for supporting a second active device. A layer (107) of a second material is then deposited over the layer (106) of a first material, and the structure is then subjected to a thermal treatment to alloy the first and second materials. The portion of the layers over the first region is entirely alloyed, whereas the portion of the layers over the second region is not, so that a portion (109) of the layer (106) of the first material remains.

Abstract: The present invention provides an MIS type semiconductor device, comprising a semiconductor substrate and a gate electrode formed on the gate insulating film and formed of gate material. The gate electrode comprises: a first layer of activated crystalline gate material having a first side oriented towards a substrate and a second side oriented away from the substrate, the first layer of activated crystalline gate material having a doping level of 1019 ions/cm3 or higher, and a second layer of gate material at the second side of the first layer of activated crystalline gate material. The present invention also provides a method for making such a device.

Abstract: In the method of manufacturing a semiconductor device (1) with a semiconductor body (2), a doped zone (3) is formed in the semiconductor body (2). The semiconductor body (2) has a crystalline surface region (4), which crystalline surface region (4) is at least partly antorphized so as to form an amorphous surface layer (5). The amorphization is achieved by irradiating the surface (6) with a radiation pulse (7) which is absorbed by the crystalline surface region (4). The radiation pulse (7) has a wavelength which is chosen such that the radiation is absorbed by the crystalline surface region (4), and the energy flux of the radiation pulse (7) is chosen such that the crystal line surface layer (5) is melted. The method is useful for making ultra-shallow junctions.