Abstract: A lighting device including an emissive material comprising quantum dots and a liquid medium disposed within a sealed container with at least a portion of a light guiding member disposed within the sealed container. Products including a lighting device in accordance with the invention are also disclosed.

Abstract: An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).

Abstract: Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.

Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.

Abstract: A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors.

Abstract: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.

Abstract: An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).

Abstract: A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.

Abstract: A device comprises an anode; a cathode; a layer therebetween comprising quantum dots; and a first layer comprising a material capable of transporting and injecting electrons in, or forming, contact with the cathode, the material comprising nanoparticles of an inorganic semiconductor material. In one embodiment of the device, quantum dots comprise a core comprising a first semiconductor material that confines holes better than electrons in the core and an outer shell comprising a second semiconductor material that is permeable to electrons. In another embodiment of the device, the nanoparticles comprise n-doped inorganic semiconductor material, and a second layer comprising a material capable of transporting electrons is disposed between the layer including quantum dots and the first layer, wherein the second layer has a lower electron conductivity than the first. In a further embodiment of the device, the first layer is UV treated. A method and other embodiments are also disclosed.

Abstract: An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).

Abstract: A backplane for use in an electro-optic display comprises a patterned metal foil having a plurality of apertures extending therethrough, coated on at least side with an insulating polymeric material and having a plurality of thin film electronic devices provided on the insulating polymeric material.

Abstract: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/?, wherein ? represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

Abstract: The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals.

Abstract: A backplane for use in an electro-optic display comprises a patterned metal foil having a plurality of apertures extending therethrough, coated on at least side with an insulating polymeric material and having a plurality of thin film electronic devices provided on the insulating polymeric material.

Abstract: A system and method of use of a storage capacitor to improve the appearance and addressing characteristics of an electronically driven display. The capacitor is formed by the overlap of portions of electrodes used to address different pixels, or by the overlap of an addressing line and a conductor. An insulator layer situated between the capacitor electrodes can be the same insulator layer present in an FET transistor used to address the pixel. Methods of use of capacitors to achieve improved display addressing are disclosed.

Abstract: A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.

Abstract: A quantum dot-based light sheet or film is disclosed. In certain embodiments, a quantum dot-based light sheet includes one or more films or layers comprising quantum dots (QD) disposed on at least a portion of a surface of a waveguide and one or more with LEDs optically coupled to the waveguide. The film or layer can be continuous or discontinuous. The film or layer can optionally further include a host material in which the quantum dots are dispersed. A solid state light-device including a quantum-dot based sheet or film or optical component disclosed herein is also provided.

Abstract: An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle comprises a composition including one or more functional groups that are capable of being cross-linked is disclosed. An ink composition comprising a nanomaterial, a liquid vehicle, and scatterers is also disclosed. An ink composition comprising a nanomaterial and a liquid vehicle, wherein the liquid vehicle comprises a perfluorocompound is further disclosed. A method for inkjet printing an ink including nanomaterial and a liquid vehicle with a surface tension that is not greater than about 25 dyne/cm is disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. Devices prepared from inks and methods of the invention are also described.

Abstract: A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors.

Abstract: A photovoltaic device includes a heat transfer material comprising a dispersion of down-conversion quantum dots in a host medium. In certain embodiments, the host medium comprises a liquid or fluid. In certain embodiments, a heat transfer material comprises a dispersion of down-conversion quantum dots in a host medium comprising one or more heat-transfer fluids. A heat transfer material including quantum dots is also disclosed. Such devices and heat transfer materials can be useful for light energy conversion, e.g., in solar cells. Solar cells are also disclosed.