Abstract: A high performance domino static random access memory (SRAM) is provided. The domino SRAM includes a plurality of local cell groups. Each of the plurality of local cell groups includes a plurality of SRAM cells and a local true bitline coupled to each of the plurality of SRAM cells of each local cell group. A continuous complement bitline is coupled to each of the plurality of local cell groups and is coupled to each of the plurality of SRAM cells of each local cell group. For a write to the SRAM cell complement node, only driving the continuous complement bitline is required. The domino SRAM reduces the number of required wires and required transistors as compared to prior art domino SRAM and thus the area needed and power consumption are reduced for the domino SRAM.

Abstract: A high performance domino static random access memory (SRAM) is provided. The domino SRAM includes a plurality of local cell groups. Each of the plurality of local cell groups includes a plurality of SRAM cells and a local true bitline coupled to each of the plurality of SRAM cells of each local cell group. A continuous complement bitline is coupled to each of the plurality of local cell groups and is coupled to each of the plurality of SRAM cells of each local cell group. For a write to the SRAM cell complement node, only driving the continuous complement bitline is required. The domino SRAM reduces the number of required wires and required transistors as compared to prior art domino SRAM and thus the area needed and power consumption are reduced for the domino SRAM.

Abstract: Measurement methods and a ring oscillator circuit are provided for evaluating dynamic circuits. The ring oscillator circuit includes a one-shot pulse generator receiving a single transition input signal and producing a pulse output signal having a rising transition and falling transition. The dynamic circuit to be evaluated is coupled to an output of the one-shot pulse generator receiving the pulse output signal of the one-shot pulse generator and producing a delayed output pulse at an output. A divide-by-two circuit is coupled to the output of the dynamic circuit to be evaluated. An output signal of the divide-by-two circuit is fed back to the one-shot pulse generator, and the cycle is repeated, thus oscillating. A multiplexer is connected between output of the dynamic circuit to be evaluated and the divide-by-two circuit.

Abstract: Measurement methods and a ring oscillator circuit are provided for evaluating dynamic circuits. The ring oscillator circuit includes a one-shot pulse generator receiving a single transition input signal and producing a pulse output signal having a rising transition and falling transition. The dynamic circuit to be evaluated is coupled to an output of the one-shot pulse generator receiving the pulse output signal of the one-shot pulse generator and producing a delayed output pulse at an output. A divide-by-two circuit is coupled to the output of the dynamic circuit to be evaluated. An output signal of the divide-by-two circuit is fed back to the one-shot pulse generator, and the cycle is repeated, thus oscillating. A multiplexer is connected between output of the dynamic circuit to be evaluated and the divide-by-two circuit.

Abstract: A scannable fast domino output latch is provided. A scannable latch circuit includes a scan logic receiving a scan data input and a scan data clock. The scannable latch circuit includes a transistor stack receiving a data input and receiving a system clock. A first inverter is connected to the transistor stack. The first inverter provides a latch output. A feedback path logic is connected across the first inverter. The feedback path logic is activated responsive to both the system clock and the scan data clock. Improved performance is provided by eliminating the transfer gate and active feedback from the critical path of the scannable latch circuit. The feedback path logic is activated when both the system clock and the scan data clock are low.

Abstract: A method, computer program product and apparatus for assembling array and datapath macros are provided for very large scale integrated (VLSI) semiconductor integrated circuits. User selections are received for a hierarchical macro to be created. The user selections include a command list of multiple leaf cell build commands. X and Y placer pointers are initialized. A next build command is obtained from the command list and a command type is identified. Responsive to identifying a next leaf cell build command in a leaf cell group, a user selected schematic or physical view is identified. A corresponding leaf cell view is read for the user selected schematic or physical view. X and Y sizes are obtained for the leaf cell view. Then the leaf cell is oriented and placed. Next X and Y placer pointers are calculated and the sequential steps are repeated until a last leaf cell build command in the leaf cell group is found. Then the sequential steps return to obtain a next build command from the command list.

Abstract: A wordline decoder circuit and method of decoding a wordline input signal are provided. A first decoder receives multiple inputs to be evaluated. The first decoder includes a first precharge device for precharging a first node and a first discharge device to enable discharging the first node. A first clock signal enables the first discharge device. The first clock signal disables the precharge device. A clock delay circuit receives the first clock signal and generates a delayed clock signal. A second logic is coupled to the first decoder. The second logic provides a wordline output. The second logic wordline output is enabled responsive to the delayed clock signal and is disabled responsive to the first clock signal.

Abstract: A global wire management apparatus and method for a multiple port random access memory (RAM) is disclosed. The RAM includes an array of stacked dual memory cell structures each including a common row/column decoder disposed between an upper memory cell and lower memory cell. The upper memory cell is situated adjacent upper transfer gate circuitry, and the lower memory cell is situated adjacent lower transfer gate circuitry. The decoder circuit is oriented vertically in the middle of the dual memory cell structure so that the true and complement decoder outputs may be fed upwards and downwards to the upper and lower transfer gate circuits. Wiring of the upper and lower transfer gate circuits may be effected completely at the local interconnect layer. Each of the write ports of the common decoder includes a NAND gate, an inverter, and a transfer gate for each of the upper and lower memory cells for controlling the transfer of data to the upper and lower memory cells.

Abstract: An improved apparatus and method for facilitating multiple write port access to a programmable memory apparatus is disclosed. A memory array, such as a random access memory array, includes a plurality of memory cells. A number of write ports are coupled to the memory array, each of which provides write access to individual memory cells of the memory array. Each of the write ports includes a NAND gate, an inverter, and a transfer gate. The NAND gate includes first and second inputs respectively coupled to a write row select line and a write column select line, and an output coupled to the input of the inverter and a first control input of the transfer gate. The output of the inverter is coupled to a second control input of the transfer gate. The input of the transfer gate is coupled to a data line, and the output of the transfer gate is coupled to a memory cell of the memory array.