Abstract: A passivating layer is deposited on the facet of a light emitting device comprising a thin layer of a reactive material. The thickness of the passivating layer is sufficiently thick to react with an optimum amount of contaminants on the facet but is sufficiently thin so as to be consumed in the gettering process and render the layer electrically nonconductive, if initially conductive in nature. The reactive material may be selected from the group consisting of Al,Si,Ta,V,Sb,Mn,Cr and Ti. Al has been found to be particularly good as a passivating layer with a preferred thickness for the layer being in the range of about 20.ANG. to 75.ANG., depending upon whether the layer is for purposes of surface passivation or interface passivation.

Abstract: A method of making a facet coating for a semiconductor light emitting device, such as a semiconductor laser or the like, comprising the steps of depositing a thin layer of a reactive material on the cleaved facet to getter oxygen and other reactive contaminants therefrom, and controlling the thickness of the deposition to be sufficiently thick to react with an optimum amount of said contaminants but sufficiently thin in order that the reactive material is sufficiently consumed in the gettering process to render the thin layer electrically nonconductive if conductive in nature. The reactive material may be selected from the group consisting of Al, Si, Ta, V, Sb, Mn, Cr and Ti. Al has been found to be particularly good as a passivating layer with a preferred thickness for the layer being in the range of about 20 .ANG. to 75 .ANG., depending upon whether the layer is for purposes of surface passivation or interface passivation.