Abstract: Methods for the production of a semiconductor device are disclosed. In one embodiment, a method may include: (1) mechanically contacting a first substrate (100) having a semiconductor material to a second substrate (200) having a bondable passivation material and contact vias (210) extending through the bondable passivation material; (2) covering the contact vias (210) with an at least high-resistance material (220, 300) on a side facing away from the first substrate (100); (3) applying an electric potential between the at least high-resistance material and the first substrate. The potential has a sufficient level that is functionally sufficient to initiate a bonding process between the bondable passivation material of the second substrate and the semiconductor material of the first substrate.

Abstract: Anodic bonding method are disclosed. In one embodiment, an anodic bonding method may include: (1) providing a first substrate (100) having a semiconductor material; (2) providing a second substrate (200) having a bondable passivation material and contact vias (210); (3) contacting the first substrate and the second substrate (100, 200); (4) providing a resistance layer (300, 220) on the second substrate (200); and (5) applying a potential between the resistance layer and the first substrate.

Abstract: A semiconductor device comprising a first substrate (100) including silicon may include a bondable passivation (200) made of a bondable material, especially a glass material; at least one contact via (210) extending through the passivation and contacting a region of the first substrate (100); an interface (204) created by anodic bonding between the substrate including silicon and the bondable passivation (200), wherein silicon-oxygen-silicon bonds are formed in the interface in order to provide adhesion between the passivation (200) and the substrate (100)

Abstract: Concepts as well as arrangements are suggested, according to which a bond is enabled by anodic bonding between a glass substrate (200) having contact vias (210) and a substrate (100) including a semiconductor. For this purpose, a cover of the contact vias (210) is provided during the anodic bonding method such that process conditions are created that achieve a reliable and robust bonding of the substrates. A high resistance can be provided in the region of the contact vias (210). The arrangement for contacting the semiconductor device to the silicon substrate (100) having at least one contact via (210) extending through the passivation in order to contact a region of the first substrate (100).