Abstract: A linear lighting device may include an elongated housing that defines a cavity. The linear lighting device may include plurality of emitter printed circuit boards configured to be received within the cavity. Each of the plurality of emitter printed circuit boards may include a plurality of emitter modules mounted thereto. Each of the plurality of emitter printed circuit boards may include a control circuit configured to control the plurality of emitter modules mounted to the respective emitter printed circuit board based on receipt of one or more messages. The linear lighting device may include a total internal reflection lens for each of the plurality of emitter printed circuit boards. The total internal reflection lens may be configured to diffuse light emitted by the emitter modules of the plurality of emitter printed circuit boards.

Abstract: A linear lighting device may include an elongated housing that defines a cavity. The linear lighting device may include plurality of emitter printed circuit boards configured to be received within the cavity. Each of the plurality of emitter printed circuit boards may include a plurality of emitter modules mounted thereto. Each of the plurality of emitter printed circuit boards may include a control circuit configured to control the plurality of emitter modules mounted to the respective emitter printed circuit board based on receipt of one or more messages. The linear lighting device may include a total internal reflection lens for each of the plurality of emitter printed circuit boards. The total internal reflection lens may be configured to diffuse light emitted by the emitter modules of the plurality of emitter printed circuit boards.

Abstract: An active matrix device has an array (54) of device elements, each of which comprises at least one thin film transistor (34). A thin film conductive heater element arrangement (10) is provided over a substrate of the device, and the semiconductor islands of the thin film transistors are provided over the heater element arrangement (10). The heating arrangement can remain in place in the device, thereby avoiding the need to remove the layers of the heater element arrangement during processing.

Abstract: An active matrix device has an array (54) of device elements, each of which comprises at least one thin film transistor (34). A thin film conductive heater element arrangement (10) is provided over a substrate of the device, and the semiconductor islands of the thin film transistors are provided over the heater element arrangement (10). The heating arrangement can remain in place in the device, thereby avoiding the need to remove the layers of the heater element arrangement during processing.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customization of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: A display substrate comprising a plate, for example a glass plate, on which display elements, e.g. pixels comprising pixel electrodes and thin-film-transistors, and an acoustic transducer, e.g. a microphone, speaker or buzzer, formed from thin film layers over a cavity, are formed. The cavity may be provided by powderblasting through the depth of the glass plate. The display substrate with integrated acoustic transducer may be incorporated in a display device, e.g. a liquid crystal display device. Also described is a discrete acoustic transducer, comprising a plate of an insulating material, a cavity in the plate, a plurality of layers that have been deposited on the plate, and a moveable member formed from the deposited layers and positioned over the cavity.

Abstract: An electronic device (38) for mounting on a curved or flexible support (42) and a method for fabrication of the same. The electronic device comprises a layer (2) of rigid material having electronic components on its upper surface. Weakened regions (6) of the rigid layer (2) define contiguous portions of the rigid layer, and flexible connectors (16) extend between components on different portions. The rigid layer (2) can be fractured along the weakened regions (6) to afford flexibility.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) (81) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM (81) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) (81) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM (81) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) (81) comprising a matrix array of switching elements (20) (whose spacing defines a base pitch and a pixel array comprising a matric array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM (81) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: The forward and reverse blocking voltage capability of a thyristor in accordance with the invention is substantially independent of the active thyristor area (Aa), thereby facilitating its design and its manufacture. This is achieved by means of a concentric arrangement of a deep inner lower-doped perimeter zone (42) of the forward base region (2) with a deep outer perimeter zone (43) of the same conductivity type, doping profile and depth (A4xj=Axj). The outer perimeter zone (43) brings the reverse blocking p-n junction (34) to the front surface (11) at a lateral distance (D3) around the forward blocking p-n junction (32). The outer perimeter zone (43) extends in depth to a lower perimeter zone (44) of the underlying region (4) that forms the reverse blocking junction with the high-resistivity base region (3) of opposite conductivity type. All these perimeter zones (42-44) together provide the thyristor with a deep peripheral termination which surrounds the active thyristor area (Aa).

Abstract: A method of forming a thin film transistor comprises providing first electrode layers (42) over a transparent substrate (40), the first electrode layers comprising a lower transparent layer (42a), and an upper opaque layer (42b). The first electrode layers are patterned to define a first electrode pattern in which an edge region of the transparent layer (42a) extends beyond an edge region of the opaque layer (42b). A transistor body region comprising a semiconductor layer (16) defining the channel area of the transistor and a gate insulator layer (18) is provided over the first electrode pattern (42). A transparent second electrode layer (46) is also provided. A negative resist (70) is exposed through the substrate (40), with regions of the negative resist layer (70) shadowed by the opaque layer (42b) of the first electrode pattern (42) remaining unexposed.

Abstract: A display substrate (1) comprising a plate, for example a glass plate (2), on which display elements, e.g. pixels (4-8) comprising pixel electrodes (72) and thin-film-transistors (69), and an acoustic transducer (10), e.g. a microphone, speaker or buzzer, formed from thin film layers over a cavity (28), are formed. The cavity (28) may be provided by powderblasting through the depth of the glass plate (2). The display substrate (1) with integrated acoustic transducer (10) may be incorporated in a display device, e.g. a liquid crystal display device (11). Also described is a discrete acoustic transducer, comprising a plate of an insulating material (102), a cavity (120) in the plate (102), a plurality of layers that have been deposited on the plate, and a moveable member (122) formed from the deposited layers and positioned over the cavity (120).

Abstract: A method of forming a thin film transistor comprises providing first electrode layers (42) over a transparent substrate (40), the first electrode layers comprising a lower transparent layer (42a), and an upper opaque layer (42b). The first electrode layers are patterned to define a first electrode pattern in which an edge region of the transparent layer (42a) extends beyond an edge region of the opaque layer (42b). A transistor body region comprising a semiconductor layer (16) defining the channel area of the transistor and a gate insulator layer (18) is provided over the first electrode pattern (42). A transparent second electrode layer (46) is also provided. A negative resist (70) is exposed through the substrate (40), with regions of the negative resist layer (70) shadowed by the opaque layer (42b) of the first electrode pattern (42) remaining unexposed.

Abstract: A method of forming a thin film transistor comprises providing first electrode layers (42) over a transparent substrate (40), the first electrode layers comprising a lower transparent layer (42a), and an upper opaque layer (42b). The first electrode layers are patterned to define a first electrode pattern in which an edge region of the transparent layer (42a) extends beyond an edge region of the opaque layer (42b). A transistor body region comprising a semiconductor layer (16) defining the channel area of the transistor and a gate insulator layer (18) is provided over the first electrode pattern (42). A transparent second electrode layer (46) is also provided. A negative resist (70) is exposed through the substrate (40), with regions of the negative resist layer (70) shadowed by the opaque layer (42b) of the first electrode pattern (42) remaining unexposed.

Abstract: An electronic device (38) for mounting on a curved or flexible support (42) and a method for fabrication of the same. The electronic device comprises a layer (2) of rigid material having electronic components on its upper surface. Weakened regions (6) of the rigid layer (2) define contiguous portions of the rigid layer, and flexible connectors (16) extend between components on different portions. The rigid layer (2) can be fractured along the weakened regions (6) to afford flexibility.

Abstract: In a method of forming a micron-size field emitter, an array of conductive tips is formed on a substrate. A layer of dielectric material is formed on the substrate to a thickness substantially equal to the height of the tips, but forming a protuberance over each tip. A conductive grid layer is deposited over the dielectric layer, forming corresponding protuberances, followed by a layer of resist material which is of sufficiently low viscosity so that it flows off the grid layer at the protuberances leaving the protuberances substantially unprotected. The grid and dielectric layers in the protuberances are then etched away to reveal the tips through the resulting apertures in the grid and dielectric layers. The apertures are thereby automatically aligned with the tips without the need for lithographic processes.