Patents by Inventor Peter W. Spreen

Peter W. Spreen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a programmable chalcogenide fuse within a semiconductor device
    Patent number: 6692994
    Abstract: A method for manufacturing a programmable chalcogenide fuse within a semiconductor device is disclosed. A resistor is initially formed on a substrate. Then, a chalcogenide fuse is formed on top of the resistor. Finally, a conductive layer is deposited on top of the chalcogenide fuse for providing electrical conduction to the chalcogenide fuse.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: February 17, 2004
    Assignee: BAE Systems, Information and Electronic Systems Integration, Inc.
    Inventors: John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken, Peter W. Spreen, Tushar K. Shah
  • Method for manufacturing a programmable chalcogenide fuse within a semiconductor device
    Publication number: 20030045034
    Abstract: A method for manufacturing a programmable chalcogenide fuse within a semiconductor device is disclosed. A resistor is initially formed on a substrate. Then, a chalcogenide fuse is formed on top of the resistor. Finally, a conductive layer is deposited on top of the chalcogenide fuse for providing electrical conduction to the chalcogenide fuse.
    Type: Application
    Filed: June 26, 2002
    Publication date: March 6, 2003
    Applicant: BAE SYSTEMS, Information and Electronic Systems Integration, Inc.
    Inventors: John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken, Peter W. Spreen, Tushar K. Shah
  • Programmable chalcogenide fuse within a semiconductor device
    Patent number: 6448576
    Abstract: A method for manufacturing a programmable chalcogenide fuse within a semiconductor device is disclosed. A resistor is initially formed on a substrate. Then, a chalcogenide fuse is formed on top of the resistor. Finally, a conductive layer is deposited on top of the chalcogenide fuse for providing electrical conduction to the chalcogenide fuse.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: September 10, 2002
    Assignee: BAE Systems Information and Electronic Systems Integration, Inc.
    Inventors: John D. Davis, Thomas J. McIntyre, John C. Rodgers, Keith K. Sturcken, Peter W. Spreen, Tushar K. Shah