Patents by Inventor Peter Wai-Man Lee
Peter Wai-Man Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160223744Abstract: A tunable gain flattening filter includes a long-period grating device. The long-period grating device includes: an optical fiber that includes a core having a refractive index and a core guided mode with a first effective index, and a cladding surrounding the core and having a cladding mode with a second effective index that is less than the first effective index; a thermoelectric module, the optical fiber being mounted on the thermoelectric module; a thermoelectric cooler configured to precisely control temperature of the optical fiber; and a thermistor configured as a sensor to provide feedback for the thermoelectric module. A plurality of perturbations in refractive index are defined on the core spaced apart by a periodic distance so as to form a long-period grating with a center wavelength. Diameter of the optical fiber is tapered or etched by HF solution to about 6 to 10 ?m.Type: ApplicationFiled: January 28, 2016Publication date: August 4, 2016Inventors: Yeuk Lai Hoo, Xin Shi, Tik Ho Lau, Peter Wai-Man Lee
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Publication number: 20150353996Abstract: A label free, reusable and high sensitivity viral fiber sensor is provided in the present invention. The label free, high sensitivity and reusability are the advantages of this sensor. Long Period Microfiber Grating (LPMFG) is used for the sensing device. It allows optically detecting the change in refractive index at the grating surface with an extra high sensitivity. This provides an optical detection method to monitor DNA Hybridization. The single stranded DNA (ssDNA) probe is immobilized onto the LPMFG's surface for hybridizing with a DNA sample in order to identify the viral strain in the sample. This LPMFG-based viral sensor functions by inducing a refractive index change on the grating surface through the bio-molecule binding between the target viral ssDNA and the immobilized probe ssDNA. Regeneration of a surface-immobilized probe without a significant loss of hybridization activity retains at least 10 successive assays without any significant loss of performance (less than 10% decrease).Type: ApplicationFiled: May 10, 2015Publication date: December 10, 2015Inventors: Yeuk Lai HOO, Haifeng XUAN, Ka Lok WU, Xin SHI, Tik Ho LAU, Peter Wai Man LEE
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Publication number: 20140242363Abstract: The presently claimed invention provides a coating solution for an antibacterial coating, and a method for synthesizing the coating solution. The coating solution comprises ethanol, nitric acid, titanium tetraisopropoxide, water, and silver nitrate. Furthermore, a coating method for deposition of the antibacterial coating is also provided. The antibacterial coating of the present invention is effective in providing antibacterial function, easy to be manufactured, and durable.Type: ApplicationFiled: December 30, 2013Publication date: August 28, 2014Applicant: Nano and Advanced Materials Institute LimitedInventors: Ngar Yee HUEN, Connie Sau Kuen KWOK, Wing Kei HO, Peter Wai Man LEE
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Patent number: 7745328Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: October 21, 2008Date of Patent: June 29, 2010Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Publication number: 20090053902Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: ApplicationFiled: October 21, 2008Publication date: February 26, 2009Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7465659Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: June 23, 2006Date of Patent: December 16, 2008Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7459404Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: GrantFiled: April 18, 2006Date of Patent: December 2, 2008Assignee: Applied Materials, Inc.Inventors: Lihua Li, Tzu-Fang Huang, Jerry Sugiarto, legal representative, Li-Qun Xia, Peter Wai-Man Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park, Dian Sugiarto
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Patent number: 7157384Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: December 22, 2004Date of Patent: January 2, 2007Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7153787Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: GrantFiled: January 27, 2005Date of Patent: December 26, 2006Assignee: Applied Materials, Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Patent number: 7030041Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: GrantFiled: March 15, 2004Date of Patent: April 18, 2006Assignee: Applied Materials Inc.Inventors: Lihua Li, Tzu-Fang Huang, Jerry Sugiarto, legal representative, Li-Qun Xia, Peter Wai-Man Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park, Dian Sugiarto, deceased
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Patent number: 7024105Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.Type: GrantFiled: October 10, 2003Date of Patent: April 4, 2006Assignee: Applied Materials Inc.Inventors: Mark A. Fodor, Sophia M. Velastegui, Soovo Sen, Visweswaren Sivaramakrishnan, Peter Wai-Man Lee, Mario David Silvetti
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Patent number: 6943127Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: GrantFiled: November 22, 2002Date of Patent: September 13, 2005Assignee: Applied Materials Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Patent number: 6911403Abstract: A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.Type: GrantFiled: August 20, 2003Date of Patent: June 28, 2005Assignee: Applied Materials, Inc.Inventors: Lihua Li, Tsutomu Tanaka, Tzu-Fang Huang, Li-Qun Xia, Dian Sugiarto, Visweswaren Sivaramakrishnan, Peter Wai-Man Lee, Mario David Silvetti
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Patent number: 6838393Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: September 19, 2002Date of Patent: January 4, 2005Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Publication number: 20040161536Abstract: A method for depositing, with controlled thickness and thickness non-uniformity, a layer of a low-k dielectric material using a chemical vapor deposition process (CVD), which deposits the material for a duration of time during part of the deposition at a higher pressure of reactant gas than during the remaining time of the deposition.Type: ApplicationFiled: February 14, 2003Publication date: August 19, 2004Applicant: Applied Materials, Inc.Inventors: Chi-I Lang, Seon-Mee Cho, Peter Wai-Man Lee
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Patent number: 6709715Abstract: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.Type: GrantFiled: June 17, 1999Date of Patent: March 23, 2004Assignee: Applied Materials Inc.Inventors: Chi-I Lang, Shin-Puu Jeng, Yeming Jim Ma, Fong Chang, Peter Wai-Man Lee, David W. Cheung
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Patent number: 6663713Abstract: A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber.Type: GrantFiled: October 22, 1996Date of Patent: December 16, 2003Assignee: Applied Materials Inc.Inventors: Stuardo A. Robles, Visweswaren Sivaramakrishnan, Bang C. Nguyen, Gayathri Rao, Gary Fong, Vicente Lam, Peter Wai-Man Lee, Mei Chang
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Publication number: 20030211244Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.Type: ApplicationFiled: April 8, 2003Publication date: November 13, 2003Applicant: Applied Materials, Inc.Inventors: Lihua Li, Wen H. Zhu, Tzu-Fang Huang, Li-Qun Xia, Ellie Y. Yieh, Son Van Nguyen, Lester A. D'Cruz, Troy Kim, Dian Sugiarto, Peter Wai-Man Lee, Hichem M'Saad, Melissa M. Tam, Yi Zheng, Srinivas D. Nemani
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Publication number: 20030139035Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: ApplicationFiled: September 19, 2002Publication date: July 24, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Publication number: 20030104708Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: ApplicationFiled: November 22, 2002Publication date: June 5, 2003Applicant: Applied Materials, Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh