Abstract: Methods for making reverse-blocking insulated gate bipolar transistors and associated structures. A first and a second silicon wafer substrates are provided and bonded. One or more separation diffusion regions are formed in the first silicon wafer substrate. One or more front side metal-oxide semiconductor (MOS) structures are formed on a top surface of the first silicon wafer substrate. The second silicon wafer substrate layer is removed. A contact diffusion layer is formed on a bottom surface of the first silicon wafer substrate. A backside metallization layer is formed on a bottom surface of the contact diffusion layer.

Abstract: A method may include providing a semiconductor substrate, comprising a first layer of a first thickness dopant, a first dopant polarity, and a first dopant concentration; and a second layer having a second thickness greater than the first thickness, a second polarity, and second dopant concentration, wherein the second layer defines a second dopant concentration, greater than the first dopant concentration. The method may further include forming a separation diffusion region having a dopant of the second dopant polarity around a periphery of the first layer, where the separation diffusion region extends from a first surface to a separation depth, greater than the first thickness of the first layer. The method may also include performing a thinning of the semiconductor substrate by removing a portion of the second layer from the second surface, wherein after the thinning, the second layer comprises a third thickness, less than the first thickness.

Abstract: An apparatus and an associated method for a reverse-conducting insulated gate bipolar transistors and associated structures. The apparatus includes a substrate disposed between a frontside and a backside, a diode pilot region disposed in the substrate, an insulated gate bipolar transistor (IGBT) region disposed in the substrate, and a diode region with a barrier layer disposed adjacent to each of and between the diode pilot region and the IGBT region. The barrier layer is configured to prevent flow of electrons at a first predetermined current and allow flow of electrons at a second predetermined current.

Abstract: Methods for making reverse-blocking insulated gate bipolar transistors and associated structures. A first and a second silicon wafer substrates are provided and bonded. One or more separation diffusion regions are formed in the first silicon wafer substrate. One or more front side metal-oxide semiconductor (MOS) structures are formed on a top surface of the first silicon wafer substrate. The second silicon wafer substrate layer is removed. A contact diffusion layer is formed on a bottom surface of the first silicon wafer substrate. A backside metallization layer is formed on a bottom surface of the contact diffusion layer.