Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.

Abstract: A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.

Abstract: An apparatus for conditioning an aqueous liquid includes at least one inlet, at least one liquid treatment device for the treatment of liquid by ion exchange including a cation exchange material of which at least a portion is in the hydrogen form, a membrane filtration device and a section arranged to process filtrate produced by the membrane filtration device. This section includes a liquid treatment device for dissolving at least one mineral contributing to carbonate hardness in water into at least some of the liquid passing through the section. At least one of the at least one inlets is connected to an inlet of the membrane filtration device via at least one of the at least one liquid treatment devices for the treatment of liquid by ion exchange.

Abstract: An electrolysis cell for generating oxidizing agents, in particular ozone, for treating a liquid comprises a first electrode and a second electrode. The first and the second electrodes are spaced apart from one another by a distance (A). A particulate solid electrolyte is arranged between the first and the second electrodes and can have the liquid flowing through it. The solid electrolyte is arranged in a free space bounded by the first and the second electrodes.

Abstract: An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit is configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit is configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

Abstract: An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit may be configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit may be configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths.

Abstract: The invention relates to a method for determination of the depth of depressions which are formed in a mount substrate. According to the invention, an essentially uniform layer of a wetting agent is applied, which contains depressions, on a surface of the mount substrate, a time profile of the decrease in weight of the mount substrate is recorded, and the recorded time profile of the decrease in weight of the mount substrate is evaluated. The invention also relates to a measurement apparatus.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: The invention relates to a method for determination of the depth of depressions which are formed in a mount substrate. According to the invention, an essentially uniform layer of a wetting agent is applied, which contains depressions, on a surface of the mount substrate, a time profile of the decrease in weight of the mount substrate is recorded, and the recorded time profile of the decrease in weight of the mount substrate is evaluated. The invention also relates to a measurement apparatus.

Abstract: One embodiment of the invention provides a method for determining or inspecting a lateral dimension or a volume of a recess in a layer at a surface of a substrate or a property of a material arranged in the recess. The layer having the recess is irradiated with an electromagnetic scanning radiation having a wavelength that is greater than a lateral dimension of the recess, and an electromagnetic response radiation that emerges from an interaction of the scanning radiation with the layer having the recess is received. Characterization data, which characterize the interaction between the layer having the recess and the scanning radiation, are ascertained from the received electromagnetic response radiation, the characterization data mapping the lateral dimension or the volume of the recess or the property of the material arranged in the recess.

Abstract: A method for manufacturing a brake rotor which includes a disc-shaped carrier and friction rings arranged on or on top of the carrier, so that the friction rings and carrier form a single piece construction. The carrier and friction ring(s) are separately molded into pre-forms, subsequently joined and finished formed in a press tool. The carrier and friction rings are made from carbon/carbon materials and ceramic materials respectively. The carrier has a hat-shaped cross-sectional shape with a flanged outer edge and the friction rings are attached to each side of the flanged edge of the carrier. The brake rotor may be directly mounted onto the wheel flange via the carrier using bolts.

Abstract: A brake rotor includes a disc-shaped carrier and friction rings arranged on or on top of the carrier, so that the friction rings and carrier form a single piece construction. The carrier and friction rings are made from carbon/carbon materials and ceramic materials respectively. The carrier has a hat-shaped cross-sectional shape with a flanged outer edge and the friction rings are attached to each side of the flanged edge of the carrier. The brake rotor may be directly mounted onto the wheel flange via the carrier using bolts.

Abstract: A clamp part which is designed as a terminal strip is attached to a support part. A component, designed as a molding, has clamp bodies which can be located in the clamp part. Each clamp body has a rotatable shank which can be clamped in the clamp part in one position and can be withdrawn from the clamp part in another position. By this means, the component can be easily detached.

Abstract: A method and a circuit arrangement are provided for the transmission of communication signals over switching centers of a first switching network and of a second switching network operating with different transmission procedures. The transmission is executed with the assistance of a decentralized converter in which a fixed assignment between the transmission lines of the first switching network and the virtual channels to be employed on transmission lines of the second switching center for a signal transmission is defined. Of the signals to be transmitted, only the signal portions effecting the execution of network-dependent procedure divisions are converted in the converter. The data signals appearing in accordance with the network-independent procedure divisions are combined in unaltered form with the converted signal portions.

Abstract: A detonating arrangement for missiles in which, as a result of a change of the magnetic field of a permanent magnet at an approach to a ferromagnetic object, a voltage will be induced in an induction element, which is transmissible to the control input of electronic evaluating circuit powering a detonating medium.