Patents by Inventor Peter Werner Sutter
Peter Werner Sutter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9410243Abstract: A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.Type: GrantFiled: August 6, 2014Date of Patent: August 9, 2016Assignee: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20150167148Abstract: A method for forming high quality hexagonal boron-nitride films with multiple layers that are substantially parallel to the substrate and with substantially uniform layer thickness. In one embodiment, a bi-layer of boron-nitride is formed on a substrate by reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N2 gas mixtures at elevated temperature. In another embodiment, few-layer boron nitride films are formed by alternatingly reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N2 gas mixtures at room temperature and annealing at elevated temperature until a desired number of layers of high quality hexagonal boron nitride layers are formed on the substrate.Type: ApplicationFiled: December 17, 2014Publication date: June 18, 2015Inventors: Peter Werner Sutter, Eli Anguelova Sutter
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Patent number: 9006644Abstract: Disclosed is monolayer and/or few-layer graphene on metal or metal-coated substrates. Embodiments include graphene mirrors. In an example, a mirror includes a substrate that has a surface exhibiting a curvature operable to focus an incident beam onto a focal plane. A graphene layer conformally adheres to the substrate, and is operable to protect the substrate surface from degradation due to the incident beam and an ambient environment.Type: GrantFiled: March 20, 2013Date of Patent: April 14, 2015Assignee: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20150044367Abstract: A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.Type: ApplicationFiled: August 6, 2014Publication date: February 12, 2015Inventors: Peter Werner Sutter, Eli Anguelova Sutter
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Patent number: 8890115Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.Type: GrantFiled: June 18, 2012Date of Patent: November 18, 2014Assignee: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter
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Publication number: 20140227163Abstract: A method of forming and processing of graphene is disclosed based on exposure and selective intercalation of the partially graphene-covered metal substrate with atomic or molecular intercalation species such as oxygen (O2) and nitrogen oxide (NO2). The process of intercalation lifts the strong metal-carbon coupling and restores the characteristic Dirac behavior of isolated monolayer graphene. The interface of graphene with metals or metal-decorated substrates also provides for controlled chemical reactions based on novel functionality of the confined space between a metal surface and a graphene sheet.Type: ApplicationFiled: April 16, 2014Publication date: August 14, 2014Applicant: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Sutter
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Patent number: 8728433Abstract: A method of forming and processing of graphene is disclosed based on exposure and selective intercalation of the partially graphene-covered metal substrate with atomic or molecular intercalation species such as oxygen (O2) and nitrogen oxide (NO2). The process of intercalation lifts the strong metal-carbon coupling and restores the characteristic Dirac behavior of isolated monolayer graphene. The interface of graphene with metals or metal-decorated substrates also provides for controlled chemical reactions based on novel functionality of the confined space between a metal surface and a graphene sheet.Type: GrantFiled: May 10, 2012Date of Patent: May 20, 2014Assignee: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20130334410Abstract: Disclosed is monolayer and/or few-layer graphene on metal or metal-coated substrates. Embodiments include graphene mirrors. In an example, a mirror includes a substrate that has a surface exhibiting a curvature operable to focus an incident beam onto a focal plane. A graphene layer conformally adheres to the substrate, and is operable to protect the substrate surface from degradation due to the incident beam and an ambient environment.Type: ApplicationFiled: March 20, 2013Publication date: December 19, 2013Inventors: Peter Werner Sutter, Eli Anguelova Sutter
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Patent number: 8389387Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.Type: GrantFiled: January 6, 2010Date of Patent: March 5, 2013Assignee: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter
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Publication number: 20120288433Abstract: A method of forming and processing of graphene is disclosed based on exposure and selective intercalation of the partially graphene-covered metal substrate with atomic or molecular intercalation species such as oxygen (O2) and nitrogen oxide (NO2). The process of intercalation lifts the strong metal-carbon coupling and restores the characteristic Dirac behavior of isolated monolayer graphene. The interface of graphene with metals or metal-decorated substrates also provides for controlled chemical reactions based on novel functionality of the confined space between a metal surface and a graphene sheet.Type: ApplicationFiled: May 10, 2012Publication date: November 15, 2012Applicant: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20120270737Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.Type: ApplicationFiled: June 18, 2012Publication date: October 25, 2012Applicant: BROOKHAVEN SCIENCE ASSOCIATES, LLCInventors: ELI ANGUELOVA SUTTER, PETER WERNER SUTTER
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Patent number: 8278124Abstract: In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.Type: GrantFiled: February 16, 2010Date of Patent: October 2, 2012Assignee: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter
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Patent number: 7972560Abstract: An apparatus capable of dispensing drops of material with volumes on the order of zeptoliters is described. In some embodiments of the inventive pipette the size of the droplets so dispensed is determined by the size of a hole, or channel, through a carbon shell encapsulating a reservoir that contains material to be dispensed. The channel may be formed by irradiation with an electron beam or other high-energy beam capable of focusing to a spot size less than about 5 nanometers. In some embodiments, the dispensed droplet remains attached to the pipette by a small thread of material, an atomic scale meniscus, forming a virtually free-standing droplet. In some embodiments the droplet may wet the pipette tip and take on attributes of supported drops. Methods for fabricating and using the pipette are also described.Type: GrantFiled: April 14, 2008Date of Patent: July 5, 2011Assignee: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20100255984Abstract: Graphene is a single atomic layer of sp2-bonded C atoms densely packed into a two-dimensional honeycomb crystal lattice. A method of forming structurally perfect and defect-free graphene films comprising individual mono crystalline domains with in-plane lateral dimensions of up to 200 ?m or more is presented. This is accomplished by controlling the temperature-dependent solubility of interstitial C of a transition metal substrate having a suitable surface structure. At elevated temperatures, C is incorporated into the bulk at higher concentrations. As the substrate is cooled, a lowering of the interstitial C solubility drives a significant amount of C atoms to the surface where graphene islands nucleate and gradually increase in size with continued cooling. Ru(0001) is selected as a model system and electron microscopy is used to observe graphene growth during cooling from elevated temperatures.Type: ApplicationFiled: April 2, 2010Publication date: October 7, 2010Applicant: Brookhaven Science Associates, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20100171096Abstract: Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.Type: ApplicationFiled: January 6, 2010Publication date: July 8, 2010Applicant: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter
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Publication number: 20100159618Abstract: In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.Type: ApplicationFiled: February 16, 2010Publication date: June 24, 2010Applicant: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter
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Patent number: 7714317Abstract: In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.Type: GrantFiled: September 12, 2007Date of Patent: May 11, 2010Assignee: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter
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Publication number: 20090257921Abstract: An apparatus capable of dispensing drops of material with volumes on the order of zeptoliters is described. In some embodiments of the inventive pipette the size of the droplets so dispensed is determined by the size of a hole, or channel, through a carbon shell encapsulating a reservoir that contains material to be dispensed. The channel may be formed by irradiation with an electron beam or other high-energy beam capable of focusing to a spot size less than about 5 nanometers. In some embodiments, the dispensed droplet remains attached to the pipette by a small thread of material, an atomic scale meniscus, forming a virtually free-standing droplet. In some embodiments the droplet may wet the pipette tip and take on attributes of supported drops. Methods for fabricating and using the pipette are also described.Type: ApplicationFiled: April 14, 2008Publication date: October 15, 2009Applicant: Brookhaven Science Association, LLCInventors: Peter Werner Sutter, Eli Anguelova Sutter
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Publication number: 20090057649Abstract: In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.Type: ApplicationFiled: September 12, 2007Publication date: March 5, 2009Applicant: Brookhaven Science Associates, LLCInventors: Eli Anguelova Sutter, Peter Werner Sutter