Abstract: A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

Abstract: A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer.

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Abstract: A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.

Abstract: A method of forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing a semiconductor processing apparatus. This semiconductor processing apparatus comprises a process chamber and a carousel for stationing a wafer boat before or after processing in the process chamber. The method further comprises loading the wafer boat into the process chamber, the wafer boat comprising the plurality of substrates. The method further comprises processing the plurality of substrates in the process chamber, thereby forming, on the plurality of substrates, the epitaxial stack. This epitaxial stack has a pre-determined thickness. The processing comprises unloading the wafer boat, one or more times, from the process chamber to the carousel until the epitaxial stack reaches the pre-determined thickness.

Abstract: A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer.

Abstract: A method of forming a structure includes supporting a substrate within a reaction chamber of a semiconductor processing system, the substrate having a recess with a bottom surface and a sidewall surface extending upwards from the bottom surface of the recess. A film is deposited within the recess and onto the bottom surface and the sidewall surface of the recess, the film having a bottom segment overlaying the bottom surface of the recess and a sidewall segment deposited onto the sidewall surface of the recess. The sidewall segment of the film is removed while at least a portion bottom segment of the film is retained within the recess, the sidewall segment of the film removed from the sidewall surface more rapidly than removing the bottom segment of the film from the bottom surface of the recess. Semiconductor processing systems and structures formed using the method are also described.

Abstract: A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

Abstract: Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.

Abstract: Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.

Abstract: Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.

Abstract: Methods for thermally calibrating reaction chambers are provided. In some embodiments, methods may include calculating a first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first correction factor to a first temperature controller to provide a first calibrated contact type temperature sensor. Embodiments may also include calculating a first calibration factor of a first non-contact type temperature sensor within the first reaction chamber utilizing the first calibrated contact type temperature sensor and applying the first calibration factor to the first non-contact type temperature sensor to provide a first calibrated non-contact type temperature sensor.