Abstract: A process of producing a substrate is described. The process involves mixing intensively a starting mixture comprising silicon power, Si3N4, an silicon-organic polymer, and optionally an anhydrous organic pressing oil, thereby forming an intermediate mixture. The intermediate mixture is then shaped by a method selected from dry pressing, slip casting, hot pressing, extrusion casting, or tape casting, thereby forming an intermediate shaped article. The intermediate shaped article is then crosslinked and pyrolyzed in an inert atmosphere, thereby forming a crosslinked and pyrolyzed shaped article. The crosslinked and pyrolyzed shaped article is next nitrided, resulting in the formation of a nitrided shaped article, which may be optionally sintered, thereby forming the substrate. The substrates of the present invention may be used in the fabrication of semiconductor components, such as thin film solar cells.

Abstract: The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.

Abstract: The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N20) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.

Abstract: Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

Abstract: Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

Abstract: A sintered Si3N4 material, valves and components made with the material, and methods for making same.

Abstract: A sintered Si3N4 material, valves and components made with the material, and methods for making same.

Abstract: The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.

Abstract: A process for the production of columnlarly solidified metallic bodies by melting metal and then solidifying said metal in a crucible, wherein the dissipation of heat is greater at the upper or lower end of the crucible than at the sides, which comprises supplying heat to the verticals sides through a heating element having a plurality of individually controlled heating sections in such a quantity that a melt of the metal is formed and then establishing directional solidification by establishing a temperature gradient by varying the heat output among the heating sections of the heating element by switching.

Abstract: The process for producing silicon suitable for use in solar cells is improved by reacting a gaseous silicon compound with aluminum wherein a finely dispersed molten surface of pure aluminum or an aluminum/silicon alloy is intensively contacted with the gaseous silicon compound during the reaction.

Abstract: Silicon having a low carbon content is produced by removing carbon from molten silicon by heating the molten silicon to temperatures of 1420.degree. to 1900.degree. C. and establishing a temperature gradient of 30.degree. to 400+ K. in the melt.

Abstract: In the recrystallization and purification of a strip-shaped film of a metal or metalloid wherein one or more locally restricted melting zones are produced and are moved through the film, the improvement which comprises advancing the film, and melting it in zones which are transverse to the direction of advance of the strip-shaped film. Advantageously the film is melted by passing a current through a spirally wound coil which is placed near the film; the film is advantageously advanced in a plane so that the melt zones are diagonal relative to the film.

Abstract: A material resistant to high temperature melts of metal and salt which comprises a composite material containing silicon nitride, silicon oxynitride, silicon dioxide and silicon prepared by(a) suspending silicon powder in SiO.sub.2 sol to form a pourable mass,(b) molding a workpiece from said mass,(c) hardening the molded workpiece, and(d) nitriding the hardened workpiece in a nitrogen atmosphere to form silicon nitride and silicon oxynitride to a degree that SiO.sub.2 and elemental silicon remain detectable in the nitrided workpiece,is useful as the material of construction for crucibles and tools for confining, handling and treating melts of metals or salts.

Abstract: In the production of a semi-conductor foil by solidification of a liquid semi-conductor on a horizontal support, the improvement which comprises positioning a molding body on the horizontal support, supplying the liquid semi-conductor to the molding body, and effecting relative movement between the molding body and support in a direction parallel to the support. Thereby fault-free silicon foils can readily be produced.

Abstract: A process for the production of columnarly grown blocks of silicon containing coarsely crystalline regions comprising cooling a silicon melt in a mold, selectively effecting solidification at the melt surface and advancing the solidification front downwardly. The blocks can be sawed into chips, useful for solar cells.

Abstract: A process for the production of silicon comprising reacting a gaseous silicon compound of the formula SiH.sub.n X.sub.4-n, wherein X is halogen and n is 0 to 3, with aluminum in solid state. The resulting silicon can be highly pure and will have the particle size of the aluminum feed, making it especially useful for production of solar cells.

Abstract: In the preparation of highly orientatable needle-shaped ferrimagnetic iron oxide particles by the reduction and reoxidation of needle-shaped particles of hydrated oxide of iron which have been surface treated against sintering the improvement which comprises effecting the surface treatment by applying to the particles of hydrated oxide of iron one layer of oxygen-containing anions and a further layer of polyvalent cations, each layer weighing about 0.02 to 2% by weight of the particle. Advantageously, the polyvalent cation-containing layer is applied between two oxygen-containing anion layers, the oxygen-containing anions used are selected from the group consisting of silicate, phosphate, borate, vanadate, molybdate and tungstate, the polyvalent cations used are selected from the group consisting of aluminum, chromium, manganese, iron and gallium, each layer weighs about 0.

Abstract: An inorganically after-treated TiO.sub.2 pigment with a coating of hydrophobicizing and hydrophilicizing organic substances, which pigment comprises more than about 95% by weight of TiO.sub.2, shows a loss on annealing of less than about 0.8% (after subtraction of the carbon content) and has a grindometer value smaller than about 30, corresponding to a value of more than about 5.6 on the Hegman scale, is produced by micronizing a mixture of an inorganically after-treated TiO.sub.2 pigment, an untreated TiO.sub.2 pigment and hydrophobicizing and hydrophilicizing organic substances, the after-treated pigment being employed in about 1 to 40% by weight of total TiO.sub.2 pigment and the hydrophobicing and hydrophilicizing substances being employed in about 0.3 to 5% by weight of TiO.sub.2 pigment. The pigments are readily dispersible which simplifies their use in pigmenting lacquers, plastics and paper.

Abstract: The production of titanium dioxide pigments with improved chalking resistance and gloss retention by coating with an oxide and/or phosphate of zirconium and of titanium, aluminum and/or silicon, the improvement which comprises coating with zirconium by adding to an aqueous alkaline suspension of the titanium dioxide pigment of alkali metal or ammonium zirconium carbonate complex and slowly precipitating the zirconium by adding a dissolved compound of at least one of titanium, aluminum, silicon and phosphorus.

Abstract: In the preparation of highly orientatable needle-shaped ferrimagnetic iron oxide particles by the reduction and reoxidation of needle-shaped particles of hydrated oxide of iron which have been surface treated against sintering the improvement which comprises effecting the surface treatment by applying to the particles of hydrated oxide of iron one layer of oxygen-containing anions and a further layer of polyvalent cations, each layer weighing about 0.02 to 2% by weight of the particle. Advantageously, the polyvalent cation-containing layer is applied between two oxygen-containing anion layers, the oxygen-containing anions used are selected from the group consisting of silicate, phosphate, borate, vanadate, molybdate and tungstate, the polyvalent cations used are selected from the group consisting of aluminum, chromium, manganese, iron and gallium, each layer weighs about 0.