Abstract: The present invention is directed to a method as well as to a machine for producing a starting material for a silicon solar cell with passivated contacts.

Abstract: A treatment system (100) comprises a process chamber (101) for dynamic or static treatment of at least one substrate. An inductively coupled plasma source, ICP source (120, 120?), comprises at least one inductor (130a, 130b) extending along the longitudinal direction of the ICP source (120, 120?), a gas supply device (141, 142) for one or a plurality of process gases, and a gas directing arrangement (150) disposed in the process chamber (101), said gas directing arrangement (150) extending along the longitudinal direction of the ICP source (120, 120?) and partially surrounding the at least one inductor (130a, 130b).

Abstract: A continuous machine (100) for coating substrates (103) comprises a process module (130) and a vacuum lock (110, 150) for introducing the substrates (103) or removing the substrates (103). The vacuum lock (110, 150) comprises a chamber for receiving a substrate carrier (102) with a plurality of substrates (103) and a flow channel arrangement for evacuating and venting the chamber. The flow channel arrangement comprises a first channel for evacuating and venting the chamber and a second channel for evacuating and venting the chamber, wherein the first channel and the second channel are arranged at opposing sides of the chamber.

Abstract: The invention provides a coating system for coating substrates in a cyclic mode. The process stations of the coating system are disposed in a circular fashion. A handling mechanism is provided for transferring the substrates between the process stations. The process stations comprise a lock for loading and unloading the substrates, at least two coating chambers, each of which comprises a plasma source for stationary coating of the substrate, and preferably a heating station.