Abstract: The present disclosure relates to systems, methods, and non-transitory computer-readable media that detect synthetic user accounts of a digital system via machine learning. For instance, the disclosed systems can utilize a machine learning model to analyze account features that are related to a user account and generate an indication that the user account is synthetic based on the analysis. The disclosed systems can further disable (e.g., suspend or close) the user account based on determining that the user account is synthetic. In some cases, the machine learning model provides a precision score that indicates a likelihood that the user account is synthetic, and the disclosed systems disable the user account if the precision score satisfies a threshold. In some implementations, the disclosed systems generate the machine learning model using synthetic user accounts detected via one or more rules and other user accounts that are associated with those synthetic user accounts.

Abstract: The present application is directed to methods of forming an integral lens sheet for use with a photovoltaic solar cell subassembly. The integral lens sheet is constructed from a parquet member and one or more individual lenses. One embodiment of a method may include positioning an individual lens over each of the apertures in the parquet member. The size of the lenses may provide for peripheral sections of the lenses to overlap the parquet member. Each of the lenses may be welded to the parquet member by directing a laser beam through the peripheral sections and onto the parquet member. The laser beam may form a laser weld between the parquet member and an underside of the individual lenses.

Abstract: Reactors for growing epitaxial layers on substrates are disclosed including rotatable substrate carriers and injectors for injecting gases into the reactor towards the substrates on the carriers and including a gas separator for separately maintaining various gases between gas inlets and the injector. Various reactor embodiments are disclosed including removable gas separators, and particular injectors which include cooling channels, as well as flow restrictors mounted within the reactors to restrict the flow of the gases to the substrates from the injector, and heaters mounted within the rotatable shell holding the substrate carriers so that the heaters can be accessed and removed through a lid forming a wall of the reactor.

Abstract: The present invention provides for a chemical vapor deposition reactor cher which is fitted with a rotatable and vertically movable susceptor/wafer carrier. The susceptor/wafer carrier, which is a large diameter disk, provides the reactor with the capability of varying the plasma-substrate distance. As those skilled in the art will appreciate, such a susceptor allows high deposition rates to be achieved for a given power level because the flux of the reactant can be increased due to the high speed rotation which will decrease boundary layer thickness during growth. The ability to adjust the source-substrate distance gives more flexibility than fixed dimensional systems. Further, it allows damage in the thin films to be minimized by simple adjustments to the susceptor/wafer carrier. Because the damage to the thin films is minimized, it makes pulsed operation practical and therefore, the films may be grown in an atomic layer epitaxy mode to produce films of high quality and uniformity.