Abstract: An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

Abstract: An integrated circuit includes an array of resistance changing memory cells, and a circuit configured to apply an initialization signal to a first one of the memory cells that is in a virgin resistance state. The initialization signal is configured to modify the first memory cell without switching an operation state of the first memory cell.

Abstract: According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surface area of an end section of the first electrode that faces the resistance changing memory element is smaller than a front surface area of an end section of the second electrode that faces the resistance changing memory element.

Abstract: A method for fabricating an integrated circuit, the method comprises forming a first electrode, depositing resistance changing material over the first electrode, the resistance changing material having an active zone for switching the resistance of the resistance changing material and an inactive zone, and forming a second electrode over the resistance changing material. The chemical composition of the resistance changing material in the active zone differs from the chemical composition of the resistance changing material in the inactive zone.

Abstract: An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.

Abstract: According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surface area of an end section of the first electrode that faces the resistance changing memory element is smaller than a front surface area of an end section of the second electrode that faces the resistance changing memory element.

Abstract: An integrated circuit includes an array of resistance changing memory cells and a first circuit. The first circuit is configured to set a selected memory cell to a crystalline state by applying a decreasing stair step pulse to the selected memory cell. The pulse is based on a reset current distribution for the array of memory cells.

Abstract: An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

Abstract: An integrated circuit includes an array of resistance changing memory cells, and a circuit configured to apply an initialization signal to a first one of the memory cells that is in a virgin resistance state. The initialization signal is configured to modify the first memory cell without switching an operation state of the first memory cell.

Abstract: An integrated circuit and method for switching a resistively switching memory cell. One embodiment provides an initial pulse and at least one escalated pulse in case the memory cell did not switch.

Abstract: An integrated circuit includes an array of resistance changing memory cells and a first circuit. The first circuit is configured to set a selected memory cell to a crystalline state by applying a decreasing stair step pulse to the selected memory cell. The pulse is based on a reset current distribution for the array of memory cells.

Abstract: An integrated circuit includes a heater element serving as a first electrode, a second electrode, a memory element comprising resistance changing material coupled to the heater element and to the second electrode, and a diffusion compensation region coupled to the heater element and to the resistance changing material. The diffusion compensation region includes a surplus of at least one diffusible species present in the memory element and provides at least one diffusible species to the memory element.

Abstract: A method for fabricating an integrated circuit, the method comprises forming a first electrode, depositing resistance changing material over the first electrode, the resistance changing material having an active zone for switching the resistance of the resistance changing material and an inactive zone, and forming a second electrode over the resistance changing material.