Patents by Inventor Petra Spies
Petra Spies has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961705Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.Type: GrantFiled: December 22, 2020Date of Patent: April 16, 2024Assignee: Carl Zeiss SMT GmbHInventors: Daniel Rhinow, Markus Bauer, Rainer Fettig, David Lämmle, Marion Batz, Katharina Gries, Sebastian Vollmar, Petra Spies, Ottmar Hoinkis
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Publication number: 20230305386Abstract: The present disclosure relates to methods, to an apparatus and to a computer program for processing of a lithography object. More particularly, the present invention relates to a method for removing a material, to a corresponding apparatus and to a method for lithographic processing of a wafer, and to a computer program for performing the methods. A method for processing a lithography object comprises, for example: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region based at least partly on the first gas, wherein the first material comprises ruthenium.Type: ApplicationFiled: March 21, 2023Publication date: September 28, 2023Inventors: Christian Felix Hermanns, Petra Spies, Daniel Rhinow, Maximilian Rumler, Horst Schneider, Fan Tu, Laura Ahmels, Benjamin Herd
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Publication number: 20230185180Abstract: Method for the particle beam-induced etching of a lithography mask, more particularly a non-transmissive EUV lithography mask, having the steps of: a) providing the lithography mask in a process atmosphere, b) beaming a focused particle beam onto a target position on the lithography mask, c) supplying at least one first gaseous component to the target position in the process atmosphere, where the first gaseous component can be converted by activation into a reactive form, where the reactive form reacts with a material of the lithography mask to form a volatile compound, and d) supplying at least one second gaseous component to the target position in the process atmosphere, where the second gaseous component under predetermined process conditions with exposure to the particle beam forms a deposit comprising a compound of silicon with oxygen, nitrogen and/or carbon.Type: ApplicationFiled: February 6, 2023Publication date: June 15, 2023Inventors: Fan Tu, Horst Schneider, Markus Bauer, Petra Spies, Maximilian Rumler, Christian Felix Hermanns
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Publication number: 20210110996Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.Type: ApplicationFiled: December 22, 2020Publication date: April 15, 2021Inventors: Daniel Rhinow, Markus Bauer, Rainer Fettig, David Lämmle, Marion Batz, Katharina Gries, Sebastian Vollmar, Petra Spies, Ottmar Hoinkis
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Patent number: 9721754Abstract: The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.Type: GrantFiled: May 9, 2011Date of Patent: August 1, 2017Assignee: Carl Zeiss SMT GmbHInventors: Tristan Bret, Petra Spies, Thorsten Hofmann
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Patent number: 9023666Abstract: The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.Type: GrantFiled: August 13, 2009Date of Patent: May 5, 2015Assignee: Carl Zeiss SMS GmbHInventors: Nicole Auth, Petra Spies, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Publication number: 20140255831Abstract: The invention refers to a method and apparatus for protecting a substrate during a processing by at least one particle beam. The method comprises the following steps: (a) applying a locally restrict limited protection layer on the substrate; (b) etching the substrate and/or a layer arranged on the substrate by use of the at least one particle beam and at least one gas; and/or (c) depositing material onto the substrate by use of the at least one particle beam and at least one precursor gas; and (d) removing the locally limited protection layer from the substrate.Type: ApplicationFiled: March 7, 2014Publication date: September 11, 2014Inventors: Thorsten Hofmann, Tristan Bret, Petra Spies, Nicole Auth, Michael Budach, Dajana Cujas
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Patent number: 8632687Abstract: The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.Type: GrantFiled: August 11, 2009Date of Patent: January 21, 2014Assignee: Carl Zeiss SMS GmbHInventors: Nicole Auth, Petra Spies, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Patent number: 8623230Abstract: The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.Type: GrantFiled: December 18, 2008Date of Patent: January 7, 2014Assignee: Carl Zeiss SMS GmbHInventors: Nicole Auth, Petra Spies, Tristan Bret, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Patent number: 8318593Abstract: The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.Type: GrantFiled: August 7, 2009Date of Patent: November 27, 2012Assignee: Carl Zeiss SMS GmbHInventors: Nicole Auth, Petra Spies, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Publication number: 20120273458Abstract: The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.Type: ApplicationFiled: May 9, 2011Publication date: November 1, 2012Inventors: Tristan Bret, Petra Spies, Thorsten Hofmann
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Publication number: 20110183517Abstract: The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate (90), storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate (90).Type: ApplicationFiled: August 7, 2009Publication date: July 28, 2011Applicant: CARL ZEISS SMS GMBHInventors: Nicole Auth, Petra Spies, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Publication number: 20110183523Abstract: The invention relates to a method for electron beam induced etching of a layer contaminated with gallium (120), (220) with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer (120), (220) and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.Type: ApplicationFiled: August 11, 2009Publication date: July 28, 2011Applicant: CARL ZEISS SMS GMBHInventors: Nicole Auth, Petra Spies, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Publication number: 20110183444Abstract: The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gasType: ApplicationFiled: August 13, 2009Publication date: July 28, 2011Applicant: CARL ZEISS SMS GMBHInventors: Nicole Auth, Petra Spies, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Publication number: 20100282596Abstract: The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.Type: ApplicationFiled: December 18, 2008Publication date: November 11, 2010Applicant: NAWOTEC GMBHInventors: Nicole Auth, Petra Spies, Tristan Bret, Rainer Becker, Thorsten Hofmann, Klaus Edinger
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Patent number: 7786403Abstract: A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.Type: GrantFiled: August 27, 2004Date of Patent: August 31, 2010Assignee: Nawo Tec GmbHInventors: Hans Koops, Klaus Edinger, Sergey Babin, Thorsten Hofmann, Petra Spies
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Publication number: 20050087514Abstract: A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.Type: ApplicationFiled: August 27, 2004Publication date: April 28, 2005Inventors: Hans Koops, Klaus Edinger, Sergey Babin, Thorsten Hofmann, Petra Spies