Patents by Inventor Petri I. Raisanen

Petri I. Raisanen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
    Patent number: 8883270
    Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: November 11, 2014
    Assignee: ASM America, Inc.
    Inventors: Eric Shero, Petri I. Raisanen, Sung Hoon Jung, Chang-Gong Wang
  • Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
    Patent number: 8877655
    Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: November 4, 2014
    Assignee: ASM America, Inc.
    Inventors: Eric J. Shero, Petri I. Raisanen, Sung-Hoon Jung, Chang-Gong Wang
  • Atomic layer deposition of hafnium lanthanum oxides
    Patent number: 8071452
    Abstract: There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: December 6, 2011
    Assignee: ASM America, Inc.
    Inventor: Petri I. Raisanen
  • SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES
    Publication number: 20110275166
    Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
    Type: Application
    Filed: May 6, 2011
    Publication date: November 10, 2011
    Inventors: Eric J. Shero, Petri I. Raisanen, Sung-Hoon Jung, Chang-Gong Wang
  • SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES
    Publication number: 20110070380
    Abstract: Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
    Type: Application
    Filed: August 11, 2010
    Publication date: March 24, 2011
    Inventors: Eric Shero, Petri I. Raisanen, Sung Hoon Jung, Chang-Gong Wang
  • ATOMIC LAYER DEPOSITION OF HAFNIUM LANTHANUM OXIDES
    Publication number: 20100270626
    Abstract: There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.
    Type: Application
    Filed: April 27, 2009
    Publication date: October 28, 2010
    Inventor: Petri I. Raisanen