Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

Abstract: A method of determining a mark measurement sequence for an object comprising a plurality of marks, the method including: receiving location data for the plurality of marks that are to be measured; obtaining a boundary model of a positioning device used for performing the mark measurement sequence; and determining the mark measurement sequence based on the location data and the boundary model.

Abstract: The present invention provides a method to obtain a height map of a substrate having alignment marks, the method comprising the steps: determining a height of one or more locations or areas of the substrate, and determining the height map of the substrate on the basis of the determined height of the one or more locations or areas of the substrate and a shape model of the substrate.

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

Abstract: The present invention provides a method to obtain a height map of a substrate having alignment marks, the method comprising the steps: determining a height of one or more locations or areas of the substrate, and determining the height map of the substrate on the basis of the determined height of the one or more locations or areas of the substrate and a shape model of the substrate.

Abstract: The invention relates to a setpoint generator for moving a patterning device of a lithographic apparatus, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the setpoint generator comprises a finite number of movement profiles for the patterning device, and wherein the setpoint generator is configured to select one of the finite number of movement profiles based on a desired movement profile and to output the selected movement profile as a setpoint for the patterning device.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: The invention relates to a setpoint generator for moving a patterning device of a lithographic apparatus, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the setpoint generator comprises a finite number of movement profiles for the patterning device, and wherein the setpoint generator is configured to select one of the finite number of movement profiles based on a desired movement profile and to output the selected movement profile as a setpoint for the patterning device.

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

Abstract: A route for a substrate support that supports a substrate in an immersion lithographic apparatus is calculated to satisfy the following constraints: after the edge of the substrate first contacts the immersion space, the substrate remains in contact with the immersion space until all target portions are exposed; exposures of target portions are performed while the substrate moves in a scan direction; and all movements of the substrate between exposures are, in a plane parallel to its upper surface, either curved or only in one of the scan directions or transverse directions. In order to reduce exposure defects at the edge of the substrate the outside portion of the substrate is avoided from being exposed to the immersion liquid. The transfer routes are designed to overly the substrate surface.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

Abstract: A route for a substrate support that supports a substrate in an immersion lithographic apparatus is calculated to satisfy the following constraints: after the edge of the substrate first contacts the immersion space, the substrate remains in contact with the immersion space until all target portions are exposed; exposures of target portions are performed while the substrate moves in a scan direction; and all movements of the substrate between exposures are, in a plane parallel to its upper surface, either curved or only in one of the scan directions or transverse directions. In order to reduce exposure defects at the edge of the substrate the outside portion of the substrate is avoided from being exposed to the immersion liquid. The transfer routes are designed to overly the substrate surface.

Abstract: A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Abstract: A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.

Abstract: A substrate handler for transferring substrates to be exposed from a track to a lithographic apparatus. The substrate handler comprises a controller. The controller is configured to determine an instance for starting a transfer process of a first one of the substrates. The instance is based on a predetermined processing characteristic of the lithographic apparatus, in order to maintain a transfer period of the substrate in the substrate handler substantially constant.

Abstract: A lithographic apparatus comprising an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the radiation beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate, wherein the lithographic apparatus further comprises a patterning device masking blade provided with a hole, a diffusing material being located at the hole.

Abstract: A lithographic apparatus comprising an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the radiation beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned radiation beam onto a target portion of the substrate, wherein the lithographic apparatus further comprises a patterning device masking blade provided with a hole, a diffusing material being located at the hole.