Patents by Inventor Petrus M. A. W. Moors

Petrus M. A. W. Moors has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with a high-frequency bipolar transistor on an insulating substrate
    Patent number: 6087721
    Abstract: A bipolar transistor (3) is provided with a first main surface (4) in contact with a conductive mounting surface (2), and with an opposed second main surface (12) having connection pads (5, 6, 40) for an emitter, base, and collector. The lateral dimensions of the conductive mounting surface (2) are practically equal to the dimensions of the first main surface (4) of the transistor (3), and may thus be relatively small. The high-frequency properties of the transistor (3) are strongly determined by the size of the conductive mounting surface (2), which through an insulating substrate (1) forms a parasitic capacitance with a conductive ground surface (18), which capacitance is connected to the transistor (3). This parasitic capacitance is very important especially for high-frequency applications. Furthermore, the bonding wires (E, B) for the connection pads of emitter and base are shorter than in the prior art because they need not pass over a relatively large conductive mounting surface (2).
    Type: Grant
    Filed: November 3, 1997
    Date of Patent: July 11, 2000
    Assignee: U.S. Philips Corporation
    Inventors: Atef Akhnoukh, Petrus M. A. W. Moors
  • Method of manufacturing a bipolar transistor having emitter series resistors
    Patent number: 4762804
    Abstract: A method is set forth of manufacturing a bipolar transistor with emitter ballast resistors. According to the invention, a base window and a strip-shaped opening are formed beside each other on a collector region. The strip-shaped opening is first covered by a masking layer and then doping of the base is provided. After removal of the masking layer, oxide layers of the same thickness are formed in the base window and in the strip-shaped opening. After formation of emitter fingers, base contact windows are formed within the base zone, and resistance windows are formed within the strip-shaped opening, whereupon simultaneously base contact zones and mutually separated emitter ballast resistors are formed in these windows.
    Type: Grant
    Filed: January 23, 1987
    Date of Patent: August 9, 1988
    Assignee: U.S. Philips Corporation
    Inventor: Petrus M. A. W. Moors
  • Method of manufacturing transistors
    Patent number: 4566176
    Abstract: A method of manufacturing a semiconductor device is set forth to provide a high-frequency bipolar transistor with very fine emitter-base geometry. The method comprises the steps of forming a base region, forming an insulating layer on the base region, and implanting emitter zones and base contact zones in windows in the insulating layer. Only emitter windows are first formed, then the emitter zones are implanted and a masking layer is provided on the insulating layer and in the emitter windows so that the base contact windows can be etched through apertures in the masking layer. The base contact zones are then implanted to the base contact windows.
    Type: Grant
    Filed: May 23, 1984
    Date of Patent: January 28, 1986
    Assignee: U.S. Philips Corporation
    Inventors: Petrus M. A. W. Moors, Teunis H. Uittenbogaard