Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: The present invention comprises a lithographic apparatus and device manufacturing method method that uses a patterning device that increase a number of individually controllable elements that are programmed simultaneously to increase an update rate of an array of individually controllable elements. A number of required high speed analog inputs to the array is reduced. The complexity of the array is reduced and the maximum update speed of the array is increased. Furthermore, the number of elements within an array can be readily expanded. The patterning device can be divided into a plurality of groups of cells and the lithographic apparatus can comprise a plurality of supply channels. Each supply channel can be arranged to provide a voltage signal to each cell in a respective group of cells. This can reduce the number of required inputs to the patterning device for individually addressing each cell.

Abstract: A lithographic apparatus capable of wirelessly communicating control and power signals, is presented herein. In one embodiment, the apparatus comprises an illumination system to provide a beam of radiation, a support structure configured to support a patterning device that imparts the beam of radiation with a pattern in its cross-section, a substrate holder configured to hold a substrate, a projection system to project the patterned beam radiation onto a target portion of the substrate, and a wireless signaling system configured to transmit and receive information-bearing electromagnetic radiation. The wireless system comprises at least a transmitter to transmit the electromagnetic radiation and a first transducer configured to receive and convert the electromagnetic radiation into a first electrical signal containing the information which is used to control at least a portion of the support structure, the substrate table, the projection system, and the illumination system.

Abstract: A lithographic apparatus includes a substrate table to hold a substrate; a substrate table position measurement system to measure a position quantity of the substrate table, a projection system to project a patterned radiation beam onto a target portion of the substrate, a fluid supply system to supply an immersion fluid in a space between a downstream lens of the projection system and the substrate, and a fluid supply system position measurement system to measure a position quantity of the fluid supply system. To prevent a collision between the fluid supply system and the substrate table, a damage control system of the lithographic apparatus may include a calculator to calculate a dimensional quantity of a gap between the fluid supply system and the substrate table from the positioned quantity of the substrate table and the position quantity of the fluid supply system. The damage control system may generate a warning signal when the dimensional quantity goes beyond a predetermined safety level.