Abstract: An electronic device can include an interposer, a first porous polymer layer, and one or more die. The interposer can include a metallic through via extending from a first surface of the interposer to a second surface of the interposer. The first polymer layer can be adjacent to the first surface of the interposer. The one or more dies can be coupled to the first porous polymer layer and connected to the metallic through via.

Abstract: Microelectronic integrated circuit package structures include a first layer over a substrate, the first layer having a matrix material and a filler material within the matrix material. A second layer is on the first layer, the second layer comprising the matrix material or a second material, where the filler material is substantially absent from the second layer. A first portion of a conductive feature is on the second layer and a second portion of the conductive feature is on a sidewall of the first layer.

Abstract: A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate with a stress buffer dielectric between the contact and the bulk dielectric. The bulk dielectric typically covers an integrated circuit metal layer to provide electrical isolation of the circuitry. The semiconductor circuit can include a trace that connects the contact to a package pad to enable external access to the signal from off the semiconductor circuit. The stress buffer dielectric has higher elongation and lower filler loading relative to the bulk dielectric, which makes the stress buffer more pliable. The stress buffer is disposed between the contact and the bulk dielectric to improve stress response, reducing the possibility of delamination of the contact from the bulk dielectric.

Abstract: An electronic substrate may be formed having at least one dielectric layer that is heterogeneous. The heterogeneous dielectric layer may comprise three separately formed materials that decouple the critical regions within a dielectric layer and allow for the optimization of desired interfacial properties, while minimizing the impact to the bulk requirements of the electronic substrate.