Abstract: A time division multiplexing system for telephone comprises a matrix of n.sup.2 two-state elements arranged in rows and in columns. The elements of the same row have respective inputs connected in parallel, these inputs being adapted for receiving telephonic frames. The elements of the same column have their respective outputs adapted for delivering telephonic frames. The n.sup.2 elements have respective control inputs for triggering from one conducting state to the other blocked state or vice-versa. These n.sup.2 control inputs are connected successively and cyclically to the n.sup.2 bistable elements of the successive columns, of a memory having p columns, by means of a shift register.

Abstract: A novel high-speed logic gate of compact design, having low energy consumption comprises a plurality of components each constituted by two complementary transistors and saturable resistors integrated upon one in the same substrate. The base of the first transistor has for its base a portion of the collector of a second transistor, and for its collector the base of the second transistor. The second transistor has its base diffused into its emitter into its base.

Abstract: A method of manufacturing, making it possible to effect the simultaneous batch production in particular of field-effect transistors operating at frequencies in excess of 30 Gc/s, whose source and drain constitute two very narrow and very closely spaced bands, is provided. To this end, using a single masking operation, the source and drain of contacts are produced, these being covered by a chromium band. This band acts as a mask during the ion machining of a trench between the bands. The aluminium subsequently deposited, in particular in the trench, in order to form the gate of the transistor, is removed from the other regions of the structure by electrolytic etching. Along with the chromium, the aluminium serves as a mask during a final step of ion etching, which makes it possible to produce a "mesa" structure.

Abstract: A novel semiconductor store element comprises a bistable pnpn structure of the kind described in the copending Patent application Ser. No. 527,918, addressed by a structure of the same type. The system has an area of the order of 10 to 20 square microns and possesses a high switching speed.In a copending U.S. Pat. application filed the under the Ser. No. 527,918 a novel electronic component which, under the effect of applied voltages, could acquire two stable states, one in which it is conductive and the other in which it is blocked, was disclosed.This component enables a large scale integration to be achieved and has a high switching speed.The invention relates to a store element which can acquire two stable states and comprises two components of the aforesaid kind, and load resistors.