Patents by Inventor Phil Freiberger

Phil Freiberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Advanced mask patterning with patterning layer
    Patent number: 8734660
    Abstract: An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: May 27, 2014
    Assignee: Intel Corporation
    Inventors: Jian Ma, Phil Freiberger, Karmen Yung, Frederick Chen, Chaoyang Li, Steve Mak
  • ADVANCED MASK PATTERNING WITH PATTERNING LAYER
    Publication number: 20080308527
    Abstract: An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.
    Type: Application
    Filed: August 20, 2008
    Publication date: December 18, 2008
    Applicant: INTEL CORPORATION
    Inventors: JIAN MA, Phil Freiberger, Karmen Yung, Frederick Chen, Chaoyang Li, Steve Mak
  • Advanced mask patterning with patterning layer
    Patent number: 7460209
    Abstract: An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: December 2, 2008
    Assignee: Intel Corporation
    Inventors: Jian Ma, Phil Freiberger, Karmen Yung, Frederick Chen, Chaoyang Li, Steve Mak
  • Advanced mask patterning with patterning layer
    Publication number: 20060215135
    Abstract: An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.
    Type: Application
    Filed: March 28, 2005
    Publication date: September 28, 2006
    Inventors: Jian Ma, Phil Freiberger, Karmen Yung, Frederick Chen, Chaoyang Li, Steve Mak