Patents by Inventor Phil-Jae Chang

Phil-Jae Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7420207
    Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: September 2, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Jin Kim, Kwang-Joon Yoon, Phil-Jae Chang, Kye-Won Maeng, Young-Jun Park
  • Publication number: 20060138580
    Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 29, 2006
    Inventors: Tae-Jin Kim, Kwang-Joon Yoon, Phil-Jae Chang, Kye-Won Maeng, Young-Jun Park