Patents by Inventor Phil Soon Jang

Phil Soon Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flash memory device and fabrication method thereof
    Patent number: 8247299
    Abstract: The present invention relates to a flash memory device and a fabrication method thereof. In an embodiment, a flash memory device includes a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate, an isolation layer formed in a field region of the semiconductor substrate and projected higher than the floating gate, a dielectric layer formed over the semiconductor substrate including the floating gate and the isolation layer, and a control gate formed on the dielectric layer.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: August 21, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Phil Soon Jang, Hee Hyun Chang
  • FLASH MEMORY DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20110095352
    Abstract: The present invention relates to a flash memory device and a fabrication method thereof. In an embodiment, a flash memory device includes a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate, an isolation layer formed in a field region of the semiconductor substrate and projected higher than the floating gate, a dielectric layer formed over the semiconductor substrate including the floating gate and the isolation layer, and a control gate formed on the dielectric layer.
    Type: Application
    Filed: December 30, 2010
    Publication date: April 28, 2011
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Phil Soon Jang, Hee Hyun Chang
  • FLASH MEMORY DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20090050952
    Abstract: The present invention relates to a flash memory device and a fabrication method thereof. In an embodiment, a flash memory device includes a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate, an isolation layer formed in a field region of the semiconductor substrate and projected higher than the floating gate, a dielectric layer formed over the semiconductor substrate including the floating gate and the isolation layer, and a control gate formed on the dielectric layer.
    Type: Application
    Filed: January 16, 2008
    Publication date: February 26, 2009
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Phil Soon JANG, Hee Hyun CHANG