Patents by Inventor Philip A. Bottini
Philip A. Bottini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11885021Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: GrantFiled: May 11, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Kartik Shah, Vishwas Kumar Pandey, Kailash Pradhan, Sairaju Tallavarjula, Rene George, Eric Kihara Shono, Philip A. Bottini, Roger Curtis
-
Patent number: 11124878Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: GrantFiled: July 30, 2018Date of Patent: September 21, 2021Assignee: Applied Materials, Inc.Inventors: Kartik Shah, Vishwas Kumar Pandey, Kailash Pradhan, Sairaju Tallavarjula, Rene George, Eric Kihara Shono, Philip A. Bottini, Roger Curtis
-
Publication number: 20210262093Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: ApplicationFiled: May 11, 2021Publication date: August 26, 2021Inventors: Kartik SHAH, Vishwas Kumar PANDEY, Kailash PRADHAN, Sairaju TALLAVARJULA, Rene GEORGE, Eric Kihara SHONO, Philip A. BOTTINI, Roger CURTIS
-
Patent number: 10290504Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.Type: GrantFiled: November 27, 2017Date of Patent: May 14, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Wei Liu, Theresa Kramer Guarini, Huy Q. Nguyen, Malcolm Bevan, Houda Graoui, Philip A. Bottini, Bernard L. Hwang, Lara Hawrylchak, Rene George
-
Publication number: 20190032216Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: ApplicationFiled: July 30, 2018Publication date: January 31, 2019Inventors: Kartik SHAH, Vishwas Kumar PANDEY, Kailash PRADHAN, Sairaju TALLAVARJULA, Rene GEORGE, Eric Kihara SHONO, Philip A. BOTTINI, Roger CURTIS
-
Publication number: 20180082847Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.Type: ApplicationFiled: November 27, 2017Publication date: March 22, 2018Inventors: Wei LIU, Theresa Kramer GUARINI, Huy Q. NGUYEN, Malcolm BEVAN, Houda GRAOUI, Philip A. BOTTINI, Bernard L. HWANG, Lara HAWRYLCHAK, Rene GEORGE
-
Patent number: 9831091Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.Type: GrantFiled: June 2, 2016Date of Patent: November 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Wei Liu, Theresa Kramer Guarini, Huy Q. Nguyen, Malcolm Bevan, Houda Graoui, Philip A. Bottini, Bernard L. Hwang, Lara Hawrylchak, Rene George
-
Publication number: 20160358781Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.Type: ApplicationFiled: June 2, 2016Publication date: December 8, 2016Inventors: Wei LIU, Theresa Kramer GUARINI, Huy Q. NGUYEN, Malcolm BEVAN, Houda GRAOUI, Philip A. BOTTINI, Bernard L. HWANG, Lara HAWRYLCHAK, Rene GEORGE
-
Patent number: 8999106Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.Type: GrantFiled: December 19, 2007Date of Patent: April 7, 2015Assignee: Applied Materials, Inc.Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark
-
Publication number: 20120164845Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.Type: ApplicationFiled: March 8, 2012Publication date: June 28, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Wei Liu, Johanes S. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
-
Patent number: 8137463Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.Type: GrantFiled: December 19, 2007Date of Patent: March 20, 2012Assignee: Applied Materials, Inc.Inventors: Wei Liu, Johanes S. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
-
Patent number: 8062472Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.Type: GrantFiled: December 19, 2007Date of Patent: November 22, 2011Assignee: Applied Materials, Inc.Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
-
Publication number: 20090159425Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini
-
Publication number: 20090162570Abstract: The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Johanes F. Swenberg, Wei Liu, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark, Theresa Kramer Guarini, Woong Choi
-
Publication number: 20090162952Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Wei Liu, Johanes F. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini, Michael J. Mark
-
Publication number: 20090159424Abstract: The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.Type: ApplicationFiled: December 19, 2007Publication date: June 25, 2009Inventors: Wei Liu, Johanes S. Swenberg, Hanh D. Nguyen, Son T. Nguyen, Roger Curtis, Philip A. Bottini