Abstract: An optical transceiver module configured for longwave optical transmission is disclosed. Significantly, the transceiver module utilizes components formerly used only for shortwave optical transmission, thereby reducing new component production and device complexity. In one embodiment, the transceiver module includes a transmitter optical subassembly including a laser capable of producing an optical signal. A consolidated laser driver/post amplifier including a first bias current source provides a bias current to the laser for producing the optical signal. A means for amplifying the bias current provided to the laser by the first bias current source is also included as a separate component from the laser driver/post amplifier. The means for amplifying in one embodiment is a field-effect transistor that is operably connected to the laser driver/post amplifier and configured to provide an additional bias current to the laser diode such that sufficient lasing operation of the laser is realized.

Abstract: An optical transceiver module configured for longwave optical transmission is disclosed. Significantly, the transceiver module utilizes components formerly used only for shortwave optical transmission, thereby reducing new component production and device complexity. In one embodiment, the transceiver module includes a transmitter optical subassembly including a laser capable of producing an optical signal. A consolidated laser driver/post amplifier including a first bias current source provides a bias current to the laser for producing the optical signal. A means for amplifying the bias current provided to the laser by the first bias current source is also included as a separate component from the laser driver/post amplifier. The means for amplifying in one embodiment is a field-effect transistor that is operably connected to the laser driver/post amplifier and configured to provide an additional bias current to the laser diode such that sufficient lasing operation of the laser is realized.

Abstract: A vertical cavity surface emitting laser (103) and a diode (105) is provided. The diode (105) is electrically coupled in reverse parallel to the vertical cavity surface emitting laser (103), thereby providing a portion of protection against electro-static discharge damage to the vertical cavity surface emitting laser (103).

Abstract: Automatic power control of a semiconductor laser (12, 72) is achieved by monitoring the spontaneous lateral emissions from the semiconductor laser and adjusting the drive signal to the laser based on the detected emissions. A lateral detector (13, 73) generates a photocurrent from the spontaneous emissions. The detector signal (Ilat) is compared to a reference signal (Iref) and the difference is applied to the drive signal (Ilas) to alter or control the laser output. The magnitudes of the reference signal source and the drive signal source are determined and set based on the desired optical output power of the semiconductor laser measured at a series of temperatures.

Abstract: An array of annular waveguide VCSELs for achieving a stable single high order mode light source characterized as emitting a plurality of emission beams of varying wavelengths. The device array including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack is etched to define a first VCSEL and at least one additional VCSEL, each VCSEL including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.

Abstract: A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region. The active region including an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an AlGaAs/GaAs material system. The active structure including a nitride based quantum well and a GaAsP barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.

Abstract: An annular waveguide VCSEL for achieving a stable high power single high order mode output including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.

Abstract: A semiconductor laser package including a plastic resin housing for encapsulating a vertical cavity surface emitting laser. The semiconductor laser package including a mounting base, a surround can and a cap. The cap having integrally formed therein a power monitoring system, such as a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The photodetector optically positioned to receive a portion of the emission. The power monitoring system including a plurality of layers of an amorphous silicon material and/or a germanium material.

Abstract: A stack of distributed Bragg reflectors is disposed on the surface of a semiconductor substrate. The stack includes a plurality of alternating layers of material having alternating refractive indexes with the stack having a first dopant type. A first cladding region is disposed on the stack with an active area disposed on the first cladding region. The active area includes at least two barrier layers and a quantum well layer. A second cladding region is disposed on the active area with a stack of distributed Bragg reflectors disposed on the cladding region. A contact region is disposed on the second stack of distributed Bragg reflectors. The contact region includes a magnesium doped gallium phosphide material.

Abstract: A method of biasing a semiconductor laser to a threshold level including the step of providing a semiconductor laser, monitoring spontaneous emissions of the semiconductor laser, identifying a point at which the spontaneous emissions clamp, and employing feedback to maintain a threshold level, driven by the identification of the point at which the spontaneous emissions clamp.

Abstract: A hybrid mirror structure for a visible emitting VCSEL including a first distributed Bragg reflector disposed on a substrate and including first pairs of alternating layers including an oxidized aluminum material and second pairs of alternating layers. A first cladding region disposed on the first distributed Bragg reflector, an active region disposed on the first cladding region, and a second cladding region disposed on the active region, and a second distributed Bragg reflector disposed on the second cladding region. In the first distributed Bragg reflector, each pair of alternating layers includes a layer containing oxidized aluminum. Alternate layers contain AlAs which is oxidized to decrease the index of refraction to a range of approximately 1.3 to 1.7.

Abstract: A method of controlling the spatial mode of the output of a semiconductor laser including the steps of monitoring above threshold spontaneous emissions of a semiconductor laser. Identifying a point at which the rate-of-change, or the slope, of spontaneous emissions versus drive current abruptly changes. Employing feedback to maintain spatial mode control.

Abstract: A high transconductance field effect transistor is realized by controlling the doping level in a conducting channel buried beneath a heterointerface. In one exemplary embodiment, a channel comprising an undoped, high mobility, narrow band gap quantum well in combination with an intermediate band gap layer is formed beneath a heterointerface. The heterojunction interface is between a wide band gap layer and the quantum well region. A charge sheet having the same conductivity type as the wide bandgap layer is formed near the heterointerface. Advantageously, the transconductance is enhanced by conduction in the undoped filled quantum well region.