Abstract: A device including a ferroelectric memory and methods of manufacturing the same are provided. In one embodiment, the device includes a semiconductor die with an integrated circuit fabricated thereon, a stress buffer die mounted to the semiconductor die overlying the integrated circuit, and a molding compound encapsulating the semiconductor die and the stress buffer die. Generally the integrated circuit includes a ferroelectric memory. In some embodiments, the device further includes a polyimide layer between the stress buffer and the semiconductor die. Other embodiments are also provided.

Abstract: A method and system for generating electronic keys. The method comprises providing a plurality of devices and generating an electronic key for each device of the plurality of devices, wherein the electronic keys are generated substantially simultaneously. According to the system and method disclosed herein, the electronic keys for all of the devices are generated in the same amount of time that is required to generate one electronic key for one device.

Abstract: The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond wire to an integrated circuit package. The bond pad has an oxide coating residing on at least a topmost surface of the bond pad. The oxide coating consists essentially of aluminum, copper, and oxygen. Therefore, the bond pad has little, if any, naturally occurring corrosion products such as hydrated aluminum hydroxide (Al(OH)3) and/or Al2Cu particles. Al(OH)3 films and Al2Cu particles have been shown to form on aluminum copper bond pads, preventing effective wire-bonding.

Abstract: The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond wire to an integrated circuit package. The bond pad has an oxide coating residing on at least a topmost surface of the bond pad. The oxide coating consists essentially of aluminum, copper, and oxygen. Therefore, the bond pad has little, if any, naturally occurring corrosion products such as hydrated aluminum hydroxide (Al(OH)3) and/or Al2Cu particles. Al(OH)3 films and Al2Cu particles have been shown to form on aluminum copper bond pads, preventing effective wire-bonding.

Abstract: The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond wire to an integrated circuit package. The bond pad has an oxide coating residing on at least a topmost surface of the bond pad. The oxide coating consists essentially of aluminum, copper, and oxygen. Therefore, the bond pad has little, if any, naturally occurring corrosion products such as hydrated aluminum hydroxide (Al(OH)3) and/or Al2Cu particles. Al(OH)3 films and Al2Cu particles have been shown to form on aluminum copper bond pads, preventing effective wire-bonding.

Abstract: The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond wire to an integrated circuit package. The bond pad has an oxide coating residing on at least a topmost surface of the bond pad. The oxide coating consists essentially of aluminum, copper, and oxygen. Therefore, the bond pad has little, if any, naturally occurring corrosion products such as hydrated aluminum hydroxide (Al(OH)3) and/or Al2Cu particles. Al(OH)3 films and Al2Cu particles have been shown to form on aluminum copper bond pads, preventing effective wire-bonding.