Patents by Inventor Philip A. Seekell

Philip A. Seekell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin valve sensor
    Patent number: 6704176
    Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: March 9, 2004
    Assignee: Seagate Technology LLC
    Inventors: Alexander M. Shukh, Dimitar V. Dimitrov, Sining Mao, Ananth Naman, Philip A. Seekell, Erli Chen, Lujun Chen
  • Spin valve sensor
    Publication number: 20030090843
    Abstract: A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.
    Type: Application
    Filed: November 13, 2001
    Publication date: May 15, 2003
    Inventors: Alexander M. Shukh, Dimitar V. Dimitrov, Sining Mao, Ananth Naman, Philip A. Seekell, Erli Chen, Lujun Chen