Patents by Inventor Philip B. Moynagh

Philip B. Moynagh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming isolation trenches in silicon semiconductor bodies
    Patent number: 4957873
    Abstract: Isolation trenches are formed in a semiconductor, e.g. silicon, substrate by selectively doping the substrate and preferentially oxidizing the doped material. Typically the dopant is arsenic or phosphorus and preferably the substrate is doped to a level of at least 5.times.10.sup.19 cm.sup.-3.
    Type: Grant
    Filed: September 21, 1989
    Date of Patent: September 18, 1990
    Assignee: STC PLC
    Inventors: Sureshchandra M. Ojha, Paul J. Rosser, Philip B. Moynagh