Abstract: A MEMS device such as an interferometric modulator includes an integrated ESD protection element capable of shunting to ground an excess current carried by an electrical conductor in the MEMS device. The protection element may be a diode and may be formed by depositing a plurality of doped semiconductor layers over the substrate on which the MEMS device is formed.

Abstract: Methods for making MEMS devices such as interferometric modulators involve selectively removing a sacrificial portion of a material to form an internal cavity, leaving behind a remaining portion of the material to form a post structure. The material may be blanket deposited and selectively altered to define sacrificial portions that are selectively removable relative to the remaining portions. Alternatively, a material layer can be laterally recessed away from openings in a covering layer. These methods may be used to make unreleased and released interferometric modulators.

Abstract: A MEMS device such as an interferometric modulator includes an integrated ESD protection element capable of shunting to ground an excess current carried by an electrical conductor in the MEMS device. The protection element may be a diode and may be formed by depositing a plurality of doped semiconductor layers over the substrate on which the MEMS device is formed.

Abstract: By varying the spacing between a partially-reflective, partially-transmissive surface and a highly reflective surface positioned behind the partially-reflective, partially-transmissive surface, an interferometric modulator selectively creates constructive and/or destructive interference between light waves reflecting off the two surfaces. The spacing can be varied by applying a voltage to create electrostatic attraction between the two surfaces, which causes one or both surfaces to deform and move closer together. In the absence of such attraction, the surfaces are in a relaxed position, where they are farther apart from one another. A actuation voltage is needed to create sufficient electrostatic attraction to cause a surface to deform. The actuation voltage can be modified by implanting ions in a dielectric layer attached to one or both surfaces.

Abstract: By varying the spacing between a partially-reflective, partially-transmissive surface and a highly reflective surface positioned behind the partially-reflective, partially-transmissive surface, an interferometric modulator selectively creates constructive and/or destructive interference between light waves reflecting off the two surfaces. The spacing can be varied by applying a voltage to create electrostatic attraction between the two surfaces, which causes one or both surfaces to deform and move closer together. In the absence of such attraction, the surfaces are in a relaxed position, where they are farther apart from one another. A actuation voltage is needed to create sufficient electrostatic attraction to cause a surface to deform. The actuation voltage can be modified by implanting ions in a dielectric layer attached to one or both surfaces.

Abstract: A method of sealing a microelectromechanical system (MEMS) device from ambient conditions is described, wherein the MEMS device is formed on a substrate and a substantially hermetic seal is formed as part of the MEMS device manufacturing process. The method comprises forming a metal seal on the substrate proximate a perimeter of the MEMS device using a method such as photolithography. The metal seal is formed on the substrate while the MEMS device retains a sacrificial layer between conductive members of MEMS elements, and the sacrificial layer is removed after formation of the seal and prior to attachment of a backplane.

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract: A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate can contain electronic circuitry for controlling the array of interferometric modulators. The backplate can provide physical support for device components, such as electronic components which can be used to control the state of the display. The backplate can also be utilized as a primary structural support for the device.

Abstract: Various embodiments of the invention relate to methods and systems for thermal compensation of a MEMS device. In certain embodiments, an interferometric modulator includes a first electrode and a flexible second electrode situated on a substrate. The flexible second electrode is a movable layer that can comprise aluminum or an aluminum-containing material, while the substrate can comprise glass. When the interferometric modulator undergoes a temperature change, the difference in thermal expansion rates results in a decrease in the tensile strain on the movable layer. Embodiments of the present invention provide a film configured to compensate for the thermal expansion. The film has a thermal expansion coefficient less than the substrate so as to compensate for expansion of the movable layer with respect to the substrate when the MEMS is exposed to thermal energy.

Abstract: A method of making a print head is disclosed for use in a marking apparatus in which a propellant stream is passed through a channel and directed toward a substrate. Marking material, such as ink, toner, etc., is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. A multiplicity of channels for directing the propellant and marking material allow for high throughput, high resolution marking. Multiple marking materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without re-registration.

Abstract: An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser.

Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract: A method for treating a substrate is disclosed in which a propellant stream is passed through a channel and directed toward a substrate. Substrate pre-marking or post-marking treatment material is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. A multiplicity of channels for directing the propellant and treatment material allow for high throughput, high resolution in-situ treatment. Marking materials and treatment materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without registration. One example is a single-pass, full-color printer.

Abstract: A marking apparatus is disclosed in which a propellant stream is passed through a channel and directed toward a substrate. Marking material, such as ink, toner, etc., is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. At sufficient velocity, and with appropriate marking material, the marking material may be kinetically fused to the substrate. A multiplicity of channels for directing the propellant and marking material allow for high throughput, high resolution marking. Multiple marking materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without registration. One example is a single-pass, full-color printer.

Abstract: A cartridge is disclosed for use in a marking apparatus in which a propellant stream is passed through a channel and directed toward a substrate. Marking material, such as ink, toner, etc., is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. A multiplicity of channels for directing the propellant and marking material allow for high throughput, high resolution marking. Multiple marking materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without re-registration. The cartridge may be replacably attached to the marking apparatus, and may contain one or more marking materials, propellant, etc.

Abstract: A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.

Abstract: An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.