Abstract: An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

Abstract: An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

Abstract: A TFEL structure is disclosed that includes first and second electrode layers sandwiching a TFEL stack including at least one insulator layer and a novel three layer laminate structure. The three-layer laminate structure includes an alkaline earth thiogallate phosphor layer, a nucleating layer and an injection layer. The nucleating layer lies between the phosphor layer and the injection layer. The injection layer provides a charge injection function through the nucleating layer for the thiogallate phosphor layer which is of high crystallinity at its interface with the nucleating layer. A preferred injection layer includes indium, for example as the metal or as indium tin oxide. The best material for the nucleating layer is zinc sulfide.