Patents by Inventor Philip E. Batson

Philip E. Batson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming crystalline silicon nitride
    Patent number: 6707086
    Abstract: In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: March 16, 2004
    Assignees: Infineon Technologies AG, International Business Machines Corp.
    Inventors: Rajarao Jammy, Philip L. Flaitz, Philip E. Batson, Hua Shen, Yun Yu Wang
  • METHOD FOR FORMING CRYSTALLINE SILICON NITRIDE
    Publication number: 20020137362
    Abstract: In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.
    Type: Application
    Filed: July 29, 1999
    Publication date: September 26, 2002
    Inventors: RAJARAO JAMMY, PHILIP L. FLAITZ, PHILIP E. BATSON, HUA SHEN, YUN YU WANG