Abstract: A system and method are provided for use with an uncooled infrared sensor. The system and method include a temperature compensated performance algorithm which is utilized to provide temperature compensated response and offset correction coefficients which are applied to a video signal of the infrared sensor to correct for variations in the video signal caused by temperature changes of the sensor.

Abstract: The present invention relates to an accumulation mode charge injection device utilizing the extrinsic photoconductivity of a doped semiconductor material to sense infrared radiation. The device is operated at cryostatic temperatures to preclude thermal ionization of the impurity sites and majority carriers are produced by IR photons interacting with these sites. The device utilizes a metal-oxide-semiconductor structure to accumulate the IR photon induced majority carriers at the semiconductor oxide interface under a first bias condition. When the bias is reversed the accumulated charges are injected into an output electrode. The sensor may be used singly or in arrays of similar sensors.