Patents by Inventor Philip Edward Batson

Philip Edward Batson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
    Patent number: 6590750
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: July 8, 2003
    Assignee: International Business Machines Corporation
    Inventors: David William Abraham, Philip Edward Batson, John Slonczewski, Philip Louis Trouilloud, William Joseph Gallagher, Stuart Parkin
  • Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
    Patent number: 6452764
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Grant
    Filed: October 16, 2000
    Date of Patent: September 17, 2002
    Assignee: International Business Machines Corporation
    Inventors: David William Abraham, Philip Edward Batson, William Joseph Gallagher, Stuart Parkin, John Slonczewski, Philip Louis Trouilloud
  • LIMITING MAGNETORESISTIVE ELECTRICAL INTERACTION TO A PREFERRED PORTION OF A MAGNETIC REGION IN MAGNETIC DEVICES
    Publication number: 20010040778
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Application
    Filed: February 10, 1998
    Publication date: November 15, 2001
    Inventors: DAVID WILLIAM ABRAHAM, PHILIP EDWARD BATSON, JOHN SLONCZEWSKI, PHILIP LOUIS TROUILLOUD, WILLIAM JOSEPH GALLAGHER, STUART PARKIN